Distributed field effect devices

Claim 1

APPARATUS FOR THE AMPLITUDE CONTROL OF ELECTRICAL SIGNALS WHICH COMPRISES A SEMICONDUCTOR BODY INCLUDING SOURCE ELEMENT MEANS AND DRAIN ELEMENT MEANS AND FURTHER INCLUDING CONDUCTING CHANNEL MEANS FOR CURRENT FLOW BETWEEN THE SOURCE AND DRAIN, AT LEAST ONE FIELD EFFECT GATING ELEMENT MEANS FOR CONTROLLING THE CONDUCTIVITY OF SAID CONDUCTING CHANNEL MEANS, THE CONDUCTIVITY BEING DEPENDENT UPON THE POTENTIAL DIFFERENCE BETWEEN THE GATING ELEMENT MEANS AND THE CONDUCTING CHANNEL MEANS, THE GREATEST DIMENSION OF SAID SOURCE, DRAIN AND GATING ELEMENTS MEANS EXTENDING PRIMARILY IN A DIRECTION TRANSVERSE TO THE CURRENT FLOW, AND MEANS FOR VARYING THE CONDUCTIVITY OF SAID CONDUCTING CHANNEL MEANS IN THE DIRECTION OF ITS BREADTH TRANSVERSE TO THE DIRECTION OF SAID CURRENT FLOW, SAID LAST MENTIONED MEANS COMPRISING A PAIR OF SPACED-APART ELECTRICAL CONTACTS FORMED ON ONE OF SAID SOURCE, DRAIN OR GATING ELEMENT MEANS AND BEING SPACEDAPART IN A DIRECTION TRANSVERSE TO THE CURRENT FLOW, SAID ONE ELEMENT MEANS HAVING THE CONTACTS FORMED THEREON BEING ELECTRICALLY RESISTIVE IN NATURE AND SAID SOURCE ELEMENT MEANS IS ELECTRICALLY RESISTIVE.