Vapor growth device

Claim 1

A vapor growth device for vapor-growing semiconductor crystal films on a plurality of semiconductor wafers, comprising: a main chamber composed of metal and having means therein defining an exhaust hole; a flat suscepter supported in the main chamber to hold said semiconductor wafers; means for heating said flat suscepter; a nOzzle pipe receptive during use of the device of a reaction gas and extending through the center portion of said flat suscepter into said main chamber and having means therein above the level of said flat suscepter defining a plurality of holes extending perpendicular to the longitudinal axis of said nozzle pipe; means for effecting relative rotational movement between said nozzle pipe and said flat suscepter; a nozzle cover having a flat part and a cylindrical part provided at the edge of said flat part, said flat part being supported on the top of said nozzle pipe and extending parallel to and in spaced-apart relationship from said flat suscepter to substantially cover same, said cylindrical part being spaced-apart from the edge of said flat suscepter to define therebetween a gap, and wherein said flat suscepter and said nozzle cover comprise an auxiliary reaction chamber so that the reaction gas injected into the auxiliary reaction chamber from said nozzle pipe flows through said gap to said exhaust hole while forming a gas curtain around said gap.

Claim 5

A device for vapor-growing semiconductor crystal films on semiconductor wafers comprising: means defining a main chamber; a support member disposed within said main chamber and having a flat surface for supporting thereon a series of semiconductor wafers; a cover member having a concave configuration disposed in a working position within said main chamber spaced apart from and substantially covering said flat surface to define therewith an auxilliary reaction chamber and spaced a predetermined distance from a peripheral portion of said support member to define therebetween a peripheral gap; means detachably mounting said concave cover member in said working position for detachment and replacement with another concave cover member having a different interior volume than said first-mentioned cover member whereby the volume of said auxiliary reaction chamber may be selectively varied by interchanging concave cover members; heating means for heating the interior of said main chamber; gas injecting means having radially directed dispensing apertures and extending into said auxiliary reaction chamber for injecting a reaction gas during use of the device into said auxiliary reaction chamber above the level of said flat surface and then through said peripheral gap in the form of a gas curtain to effectively prevent ingress of impurities into said auxiliary reaction chamber; and means coacting with said gas injecting means for exhausting from said main chamber the reaction gas flowing thereinto through said peripheral gap along with any impurities present in said main chamber; whereby the reaction gas reacts with the semiconductor wafers to form thereon crystal films.

Claim 6

A device for vapor-growing semiconductor crystal films on semiconductor wafers comprising: means defining a main chamber; a support member disposed within said main chamber and having a flat surface for supporting thereon a series of semiconductor wafers; a cover member having a concave configuration disposed in a working position within said main chamber spaced apart from and substantially covering said flat surface to define therewith an auxilliary reaction chamber and spaced a predetermined distance from a peripheral portion of said support member to define therebetween a peripheral gap; means detachably mounting said concave cover member in said working position for detachment and replacement with another concave cover member having a different interior volume than said first-mentioned cover member whereby the volume of said auxiliary reaction chamber may be selectively varied by interchanging concave cover members; heating means for heating the interior of said main chamber; gas injecting means having radially directed dispensing apertures and extending into said auxiliary reaction chamber for injecting a reaction gas during use of the device into said auxiliary reaction chamber above the level of said flat surface and then through said peripheral gap in the form of a gas curtain to effectively prevent ingress of impurities into said auxiliary reaction chamber; and means coacting with said gas injecting means for exhausting from said main chamber the reaction gas flowing thereinto through said peripheral gap along with any impurities present in said main chamber; whereby the reaction gas reacts with the semiconductor wafers to form thereon crystal films.