US3694705A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor diode with protective ring
Assignee: Siemens AG
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Filing: 1971-02-08
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Granted: 1972-09-26
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Expires: 1991-02-08
Abstract
Abstract In a semiconductor diode in which a zone of another conductance type is inserted into the surface of a zone of one conductance type, the zone of the other conductance type is enclosed by a ring-shaped region of the other conductance type, the depth of penetration of the ring-shaped region being less than the depth of penetration of the zone of the other conductance type. Due to appropriate doping of the ring-shaped region only the middle portion of the PN junction which possesses a curvature, participates in the electrical breakdown. The semiconductor diode according to the present invention has improved characteristic data.
Inventors
- 👤 Wolfgang Wenzig
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 00:17
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/10; H10D62/124; H10D62/125; H10D62/102; H10D62/103; H10D62/105; H10D62/106; H10D99/00; Y; Y10; Y10S; Y10S148/00; Y10S148/018; Y10S148/145; Y10S257/00; Y10S257/913; Y10S438/00; Y10S438/965
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
172 words
A semiconductor diode having a zone of another conductance type inserted into the surface of a zone of the one conductance type and a PN junction formed between the zone of one conductance type and the zone of the other conductance type, wherein the area formed through the PN junction consists of a middle portion running parallel to the surface, a part which is curved toward the surface and which encloses said middle portion, and of an edge portion surrounding said curved part and emerging to the surface, an annular part of the zone of the other conductance type which is adjacent to the edge portion is doped stronger than the remaining parts of the zone of the other conductance type, while an annular part of the zone of the other conductance type adjacent to the edge portion, is doped weaker than the remaining part of the zone of the one conductance type, whereby an electric breakdown occurs only in the middle part and in the curved part of the PN junction.
Claim 2
Dependent Claim
172 words
A semiconductor diode having a zone of another conductance type inserted into the surface of a zone of the one conductance type and a PN junction formed between the zone of one conductance type and the zone of the other conductance type, wherein the area formed through the PN junction consists of a middle portion running parallel to the surface, a part which is curved toward the surface and which encloses said middle portion, and of an edge portion surrounding said curved part and emerging to the surface, an annular part of the zone of the other conductance type which is adjacent to the edge portion is doped stronger than the remaining parts of the zone of the other conductance type, while an annular part of the zone of the other conductance type adjacent to the edge portion, is doped weaker than the remaining part of the zone of the one conductance type, whereby an electric breakdown occurs only in the middle part and in the curved part of the PN junction.
Claim 3
Dependent Claim
26 words
The device of claim 1 wherein the middle portion is circularly shaped and the curved portion and the edge portion are shaped as a circular ring.
Claim 4
Independent Claim
348 words
The method of producing a semiconductor diode having a zone of another conductance type inserted into the surface of a zone of the one conductance type and a PN junction formed between the zone of one conductance type and the zone of the other conductance type, wherein the area formed through the PN junction consists of a middle portion running parallel to the surface, a part which is curved toward the surface and which encloses said middle portion, and of an edge portion surrounding said curved part and emerging to the surface, the regions of the zone of one conductance type adjacent to said edge portion and of the zone of the other conductance type are designed so that an electric breakdown occurs only in the middle part and in the curved part of the PN-junction, the annular part of the zone of the other conductance type which is adjacent to the edge portion is doped stronger than the remaining parts of the zone of the other conductance type while the annular part of the zone of the other conductance type adjacent to the edge portion, is doped weaker than the remaining part of the zone of the one conductance type, which comprises providing a semiconductor body of the one conductance type through insertion, with a zone of the other conductance type so that the area of the resulting PN-junction has a middle portion running parallel to the surface of the semiconductor body and a portion which is curved toward the surface and emerges to said surface, surrounding said middle portion, inserting an annular zone of the other conductance type into the regions of the semiconductor body and into the zone of the other conductance type, both adjacent to the PN-junction which emerges to the surface, the doping gradient of the annular zone of the other conductance type is so slight that the regions of the semiconductor body which are adjacent to the PN-junction that emerges to the surface, have a lower net doping of the one conductance type compared to the remaining regions of the semiconductor body.
Claim 5
Independent Claim
348 words
The method of producing a semiconductor diode having a zone of another conductance type inserted into the surface of a zone of the one conductance type and a PN junction formed between the zone of one conductance type and the zone of the other conductance type, wherein the area formed through the PN junction consists of a middle portion running parallel to the surface, a part which is curved toward the surface and which encloses said middle portion, and of an edge portion surrounding said curved part and emerging to the surface, the regions of the zone of one conductance type adjacent to said edge portion and of the zone of the other conductance type are designed so that an electric breakdown occurs only in the middle part and in the curved part of the PN-junction, the annular part of the zone of the other conductance type which is adjacent to the edge portion is doped stronger than the remaining parts of the zone of the other conductance type while the annular part of the zone of the other conductance type adjacent to the edge portion, is doped weaker than the remaining part of the zone of the one conductance type, which comprises providing a semiconductor body of the one conductance type through insertion, with a zone of the other conductance type so that the area of the resulting PN-junction has a middle portion running parallel to the surface of the semiconductor body and a portion which is curved toward the surface and emerges to said surface, surrounding said middle portion, inserting an annular zone of the other conductance type into the regions of the semiconductor body and into the zone of the other conductance type, both adjacent to the PN-junction which emerges to the surface, the doping gradient of the annular zone of the other conductance type is so slight that the regions of the semiconductor body which are adjacent to the PN-junction that emerges to the surface, have a lower net doping of the one conductance type compared to the remaining regions of the semiconductor body.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1975-09-26 | 1976-03-27 | 1976-09-26 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1979-09-26 | 1980-03-27 | 1980-09-26 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1983-09-26 | 1984-03-27 | 1984-09-26 | $7700.00 | Window Closed / Lapsed |