US3341378A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Process for the production of electrically unsymmetrical semiconducting device
Assignee: Licentia Patent Verwaltungs GmbH
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Filing: 1963-12-09
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Granted: 1967-09-12
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Expires: 1983-12-09
Abstract
No abstract record available.
Inventors
- 👤 Gerlach Willi
- 👤 Kohl Gunter
- 👤 Monch Winfried
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 06:04
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/10; H10D62/124; H10D62/102; H10D62/103; H10D62/105; H10D62/106; H10D99/00; H10P; H10P95/00; Y; Y10; Y10S; Y10S438/00; Y10S438/965
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
138 words
A METHOD OF MANUFACTURING ELECTRICALLY UNSYMMETRICAL CONDUCTING DEVICES HAVING AT LEAST THREE LAYERS OF ALTERNATELY DIFFERENT CONDUCTING ZONES, EACH OF WHICH EXTENDS TO A COMMON PLANE, AND THE MIDDLE ZONE ACTING AS A BARRIER LAYER BETWEEN THE OTHER TWO ZONES COMPRISING THE STEPS OF APPLYING OXIDE MATERIAL TO THE SURFACE OF THE BARRIER LAYER CONTAINING AN IMPURITY, THE SURFACE OF THE OXIDE SLOPING TOWARD THE COMMON PLANE AT THE PN-JUNCTIONS, DIFFUSING AN IMPURITY OPPOSITE IN CONDUCTIVITY TO THAT CONTAINED IN THE BARRIER LAYER AND THEREBY EFFECTIVELY MODIFYING THE CONDUCTIVITY OF THE SURFACE OF THE BARRIER LAYER IN THE REGION ADJACENT TO THE PN-JUNCTIONS AND ALSO EFFECTIVELY WIDENING THE ZONE ADJACENT THE BARRIER LAYER JUST BENEATH THE SURFACE OF THE COMMON PLANE TO REDUCE THE FIELD INTENSITY OCCURING IN SAID REGION WHEN A POTENTIAL IS APPLIED TO THE SEMICONDUCTOR.
Claim 2
Independent Claim
138 words
A METHOD OF MANUFACTURING ELECTRICALLY UNSYMMETRICAL CONDUCTING DEVICES HAVING AT LEAST THREE LAYERS OF ALTERNATELY DIFFERENT CONDUCTING ZONES, EACH OF WHICH EXTENDS TO A COMMON PLANE, AND THE MIDDLE ZONE ACTING AS A BARRIER LAYER BETWEEN THE OTHER TWO ZONES COMPRISING THE STEPS OF APPLYING OXIDE MATERIAL TO THE SURFACE OF THE BARRIER LAYER CONTAINING AN IMPURITY, THE SURFACE OF THE OXIDE SLOPING TOWARD THE COMMON PLANE AT THE PN-JUNCTIONS, DIFFUSING AN IMPURITY OPPOSITE IN CONDUCTIVITY TO THAT CONTAINED IN THE BARRIER LAYER AND THEREBY EFFECTIVELY MODIFYING THE CONDUCTIVITY OF THE SURFACE OF THE BARRIER LAYER IN THE REGION ADJACENT TO THE PN-JUNCTIONS AND ALSO EFFECTIVELY WIDENING THE ZONE ADJACENT THE BARRIER LAYER JUST BENEATH THE SURFACE OF THE COMMON PLANE TO REDUCE THE FIELD INTENSITY OCCURING IN SAID REGION WHEN A POTENTIAL IS APPLIED TO THE SEMICONDUCTOR.
References Cited (Backward Citations)
US3054034A
Cited
US3210225A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1970-09-11 | 1971-03-13 | 1971-09-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1974-09-11 | 1975-03-13 | 1975-09-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1978-09-11 | 1979-03-13 | 1979-09-12 | $7700.00 | Window Closed / Lapsed |