US3341380A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of producing semiconductor devices
Assignee: General Electric Co
•
Filing: 1964-12-28
•
Granted: 1967-09-12
•
Expires: 1984-12-28
Abstract
No abstract record available.
Inventors
- 👤 Edwin J Mcts
- 👤 Finis E Gentry
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 05:35
CPC Classifications
H; H10; H10D; H10D18/00; H10D1/00; H10D1/40; H10D62/00; H10D99/00; H10P; H10P32/00; Y; Y10; Y10S; Y10S438/00; Y10S438/914; Y10S438/923; Y10S438/965
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
161 words
THE METHOD OF PRODUCING A SEMICONDUCTOR DEVICE STARTING WITH A BODY OF SEMICONDUCTOR MATERIAL HAVING A ZONE OF ONE CONDUCTIVITY TYPE MATERIAL ADJACENT ONE MAJOR SURFACE COMPRISING THE STEPS OF PRODUCING A COATING OF AN INSULATING MATERIAL ON AT LEAST THE SAID ONE MAJOR SURFACE OF SAID SEMICONDUCTOR BODY, REMOVING A PORTION OF SAID INSULATING COATING THEREBY EXPOSING AN AREA ON THE ONE SURFACE AND LEAVING SAID INSULATING MATERIAL AROUND THE PERIPHERY OF SAID AREA, AND DIFFUSING AN IMPURITY OF A CONDUCTIVITY TYPE OPPOSITE TO THAT OF THE SAID ZONE INTO SAID ONE MAJOR SURFACE FOR A TIME SUFFICIENT SIMULTANEOUSLY TO CONVERT A REGION OF SAID BODY IMMEDIATELY UNDER SAID INSULATING LAYER TO HIGH RESISTIVITY REGION OF OPPOSITE CONDUCTIVITY TYPE AND A SECOND-REGION WITHIN SAID HIGH RESISTIVITY REGION WHEREN SAID INSULATING COATING IS REMOVED TO SAID OPPOSITE CONDUCTIVITY TYPE REGION OF LOW RESISTIVITY AND GREATER DEPTH THEN SAID HIGH RESISTIVITY REGION WHEREBY THE JUNCTION TRANSITION BETWEEN THE TWO REGIONS IS GRADUAL.
Claim 2
Independent Claim
161 words
THE METHOD OF PRODUCING A SEMICONDUCTOR DEVICE STARTING WITH A BODY OF SEMICONDUCTOR MATERIAL HAVING A ZONE OF ONE CONDUCTIVITY TYPE MATERIAL ADJACENT ONE MAJOR SURFACE COMPRISING THE STEPS OF PRODUCING A COATING OF AN INSULATING MATERIAL ON AT LEAST THE SAID ONE MAJOR SURFACE OF SAID SEMICONDUCTOR BODY, REMOVING A PORTION OF SAID INSULATING COATING THEREBY EXPOSING AN AREA ON THE ONE SURFACE AND LEAVING SAID INSULATING MATERIAL AROUND THE PERIPHERY OF SAID AREA, AND DIFFUSING AN IMPURITY OF A CONDUCTIVITY TYPE OPPOSITE TO THAT OF THE SAID ZONE INTO SAID ONE MAJOR SURFACE FOR A TIME SUFFICIENT SIMULTANEOUSLY TO CONVERT A REGION OF SAID BODY IMMEDIATELY UNDER SAID INSULATING LAYER TO HIGH RESISTIVITY REGION OF OPPOSITE CONDUCTIVITY TYPE AND A SECOND-REGION WITHIN SAID HIGH RESISTIVITY REGION WHEREN SAID INSULATING COATING IS REMOVED TO SAID OPPOSITE CONDUCTIVITY TYPE REGION OF LOW RESISTIVITY AND GREATER DEPTH THEN SAID HIGH RESISTIVITY REGION WHEREBY THE JUNCTION TRANSITION BETWEEN THE TWO REGIONS IS GRADUAL.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1970-09-11 | 1971-03-13 | 1971-09-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1974-09-11 | 1975-03-13 | 1975-09-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1978-09-11 | 1979-03-13 | 1979-09-12 | $7700.00 | Window Closed / Lapsed |