US3689992A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Production of circuit device
Assignee: Telefunken Patentverwertungs GmbH
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Filing: 1965-08-02
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Granted: 1972-09-12
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Expires: 1985-08-02
Abstract
Abstract A solid state circuit arrangement having a semiconductor member and presenting reduced shunt capacitances as the result of the isolation of various regions of the member from each other and a method for fabricating such arrangement by forming a subassembly of two members, constituted by a first insulating layer and the semiconductor member, by depositing one of the members on the surface of the other thereof, depositing a second insulating layer on the side of the semiconductor member which is opposite from the surface upon which the first layer bears, forming apertures in at least one of the insulating layers to expose surface portions of the semiconductor member, and etching out the portions of the semiconductor member in the region of each aperture to create cavities which extend from one of the insulating layers to the other.
Inventors
- 👤 Hans-Jurgen Schutze
- 👤 Hennings Klaus
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 15:43
CPC Classifications
H; H10; H10W; H10W99/00; H10D; H10D99/00; H10P; H10P90/00; H10P90/19; H10P90/1904; H10P90/1906; H10W10/00; H10W10/01; H10W10/011; H10W10/019; H10W10/061; H10W10/10; H10W10/181; H10W15/00; H10W15/01; H10W90/00; H10W10/021; H10W10/20; Y; Y10; Y10S; Y10S148/00; Y10S148/051; Y10S148/085; Y10S148/145; Y10S438/00; Y10S438/928
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
111 words
A method as defined in claim 1 wherein said insulating layer is a first insulating layer, comprising the further steps of: depositing a second insulating layer on the side of said semiconductor body which is opposite from the surface bearing said first insulating layer and said support prior to forming said individual circuit components; and forming apertures in said second insulating layer for exposing surface portions of said semiconductor body; and wherein said step of removing is carried out by etching out portions of said semiconductor body in the regions of said apertures so as to create cavities in said semiconductor body which extend between said first and second insulating layers.
Claim 2
Dependent Claim
51 words
A method as recited in claim 2 comprising the further step of forming a plurality of recesses in said one surface of said semiconductor body prior to the formation of said first insulating layer, and wherein said apertures are formed in said second insulating layer in the regions of said recesses.
Claim 3
Dependent Claim
36 words
A method as recited in claim 2 wherein at least one of said cavities is formed directly below a region provided on said second insulating layer for the placement of passive circuit eleMents and conducting paths.
Claim 4
Dependent Claim
34 words
A method as recited in claim 2 comprising the further step of giving said semiconductor body a predetermined thickness by removing semiconductor material from the side thereof which is opposite said first insulating layer.
Claim 5
Dependent Claim
38 words
A method as recited in claim 2 wherein said step of etching out is performed so as to create at least one annular groove which isolates one portion of said semiconductor body from the rest of said body.
Claim 6
Dependent Claim
18 words
A method according to claim 1, wherein step (b) comprises depositing polycrystalline semiconductor material on said insulating layer.
Claim 7
Dependent Claim
121 words
A method as defined in claim 2 comprising the preliminary step of forming said semiconductor body by providing a starting body having at least one monocrystalline region protruding from one side thereof, applying an intermediate layer of insulating material to said one side of said starting body, applying a semiconductor member of polycrystalline semiconductor material to said intermediate layer, and removing a portion of said starting body from the side thereof which is opposite said one side so as to leave only said at least one protruding region, and wherein said first insulating layer is formed on the surface of said semiconductor body defined by said semiconductor member and said circuit components are formed on said at least one protruding region.
Claim 8
Dependent Claim
95 words
A method as defined in claim 2 comprising the preliminary step of forming said semiconductor body by providing a starting body having at least one monocrystalline region protruding from one side thereof, applying an alternating succession of intermediate insulating layers and semiconductor layers to said one side of said starting body, ending with a semiconductor layer, and removing a portion of said starting body and layers down to the last said semiconductor layer, and wherein said first insulating layer is formed on that surface of said semiconductor body defined by the last said semiconductor layer.
Claim 9
Dependent Claim
132 words
A method as defined in claim 1 comprising the preliminary step of forming said semiconductor body by providing a starting body containing at least one monocrystalline region on one side thereof, depositing an intermediate insulating layer on said one side of said starting body, depositing a semiconductor member of polycrystalline semiconductor material on said intermediate insulating layer, removing portions of said starting body so as to isolate said at least one monocrystalline region, applying a further intermediate insulating layer to the side of the resulting unit on which said at least one monocrystalline region is disposed, and applying a layer of polycrystalline semiconductor material on said further intermediate insulating layer; and comprising the further step of completely removing said semiconductor member after said steps (a) and (b) and before said step (c).
Claim 10
Dependent Claim
56 words
A method as defined in claim 1 wherein said semiconductor body initially carries a further insulating layer on its opposite surface and is provided with recesses in the side thereof defined by its one surface, and wherein the individual circuit components are formed in said one surface of said body at locations aligned with said recesses.
Claim 11
Dependent Claim
25 words
A method as defined in claim 11 wherein said step of forming a support is carried out by filling in said recesses with semiconductor material.
Claim 12
Dependent Claim
25 words
A method as defined in claim 11 wherein said step of forming a support is carried out by filling in said recesses with insulating material.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1975-09-12 | 1976-03-13 | 1976-09-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1979-09-12 | 1980-03-13 | 1980-09-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1983-09-12 | 1984-03-13 | 1984-09-12 | $7700.00 | Window Closed / Lapsed |