Patent US3679949A successfully refreshed from Google Patents.
US3679949A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor having tin oxide layer and substrate
Assignee: Omron Corp
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Filing: 1970-09-23
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Granted: 1972-07-25
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Expires: 1990-09-23
Abstract
Abstract A semiconductor composite having a rectifying characteristic is provided by depositing a tin oxide film on a semiconductor substrate. In view of the fact that the tin oxide film has high transparency and conductivity the composite can be used as an excellent photoelectric device. Preferably the tin oxide film is deposited on the substrate by reacting a halogenated organic tin compound with oxygen at an elevated temperature. Conductivity of the tin oxide film can be enhanced by incorporation of a small amount of antimony trichloride into the dimethyl tin dichloride. It was found that there are preferred reaction temperatures, time periods, and amount of mixed antimony trichloride for providing a composite having the desired characteristics. By depositing a plurality of separate tin oxide films on a single substrate by a photo-etching process of tin oxide film an integrated photoelectric apparatus is provided.
Inventors
- 👤 Genzo Uekusa
- 👤 Shigeru Tanimura
- 👤 Kazuhiro Higashi
- 👤 Takao Sumoto
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 11:57
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/01; H10D64/012; H10D64/0121; H10D64/0124; H10F; H10F39/00; H10F39/10; H10F39/107
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
24 words
The semiconductor composite according to claim 1 in which said semiconductor is a member selected from the group consisting of Si, Ge, and GaAs.
Claim 2
Dependent Claim
13 words
The semiconductor composite according to claim 1 in which said semiconductor is Si.
Claim 3
Dependent Claim
15 words
The semiconductor composite according to claim 3 in which said semiconductor is N-type conductivity Si.
Claim 4
Dependent Claim
25 words
A semiconductor composite according to claim 3 in which first Ti and then Ni are deposited on the silicon substrate to form an electrode thereon.
Claim 5
Dependent Claim
39 words
A semiconductor composite according to claim 1 wherein said tin oxide layer is of a thickness to receive radiation energy therethrough and further comprising means for withdrawing the photoelectric output between said tin oxide layer and said semiconductor substrate.
Claim 6
Dependent Claim
20 words
A semiconductor composite according to claim 6 and further comprising a transparent protective member applied to the tin oxide layer.
Claim 7
Dependent Claim
16 words
A semiconductor composite according to claim 1 wherein said semiconductor substrate itself comprises a semiconductor junction.
Claim 8
Dependent Claim
33 words
A semiconductor composite according to claim 8 wherein said semiconductor substrate comprises a silicon layer and has a PN junction, said silicon layer lying between said tin oxide layer and said PN junction.
Claim 9
Dependent Claim
63 words
A semiconductor composite according to claim 9 wherein said tin oxide layer is of a thickness to receive the radiation energy therethrough and wherein said tin oxide layer and said silicon layer are of a thickness so that the incoming radiation energy reaches the PN junction through the tin oxide layer, and further comprising means for withdrawing the photoelectric output of said composite.
Claim 10
Dependent Claim
35 words
A semiconductor composite according to claim 10 wherein said silicon layer is on N-layer whereby the photoelectric output from PN junction is opposite in polarity to the photoelectric output from tin oxide N-type Si composite.
Claim 11
Dependent Claim
17 words
A semiconductor composite according to claim 1 in which the metal electrode is a thin Ni film.
Claim 12
Dependent Claim
42 words
A semiconductor composite according to claim 1 in which the metal electrode comprises a Ti layer deposited on the tin oxide layer, a first metal layer deposited on the Ti layer and a second metal layer deposited on the first metal layer.
Claim 13
Dependent Claim
39 words
A semiconductor composite according to claim 13 in which the first metal layer is selected from the group consisting of Cu and Ag and the second metal layer is selected from the group consisting of Au, Ni, and Al.
Claim 14
Dependent Claim
32 words
A semiconductor composite according to claim 1 wherein said tin oxide layer comprises a plurality of separate, spaced films deposited on said semiconductor substrate whereby a plurality of rectifying elements are formed.
Claim 15
Dependent Claim
33 words
A semiconductor composite according to claim 15 wherein said plurality of films are so arranged that pattern recognition can be accomplished and, each of said films being positioned to receive the incoming light.
Claim 16
Dependent Claim
14 words
A semiconductor composite according to claim 1 wherein said tin oxide is substantially SnO2.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1975-07-25 | 1976-01-24 | 1976-07-25 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1979-07-25 | 1980-01-24 | 1980-07-25 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1983-07-25 | 1984-01-24 | 1984-07-25 | $7700.00 | Window Closed / Lapsed |