Method and apparatus for applying a film to a substrate surface by diode sputtering

Claim 2

The method of claim 1 which further includes the steps of: disposing a screen of a second material between said cathode surface and said substrate surface; and maintaining a predetermined electric potential difference between said screen and substrate surface to effect disposition of said second material upon said film.

Claim 3

The method defined in claim 3 in which: said magnetic field is confined to a region spaced from said substrate surface; and said screen is disposed between said magnetic field and said substrate surface.

Claim 4

A diode sputtering apparatus for use in a system for depositing films of material upon a substrate, which system includes an envelope for containing an ionizable gas and means for introducing said gas within said envelope, said apparatus comprising: an anode disposed within said envelope; a cathode disposed within said envelope spaced from said anode and defining an axis therebetween, said cathode adapted to support said material to face said anode; means for applying an electric field between said anode and cathode subjecting said gas to ionization and polarization and of a strength to effect bombardment of said cathode with ions of said gas having sufficient energy to dislodge from said surface layer particles that are attracted toward said anode; means for disposing said substrate on said axis in the path of said particles; and means for creating a magnetic field rotating about said axis with a strength sufficient to sweep electrons, traveling along said path, outwardly from said axis away from said substrate.

Claim 5

In an apparatus for use in a diode sputtering system, which system includes means defining a closed chamber for containing a gas under low pressure and means for introducing said gas into said chamber, said apparatus including a cathode having a flat surface mounted in said chamber, a flat substrate support platform mounted in said chamber in spaced-opposed parallel relationship to said cathode surface and aligned therewith on a cathode-platform axis normal to said surfaces, and means for applying an electric field between said cathode and said platform, the improvement comprising: means for deflecting said emitted electrons in a direction transverse to said axis to clear said substrate, including means for establishing a magnetic field extending transversely across the space between said cathode and said platform; and means for rotating said electron deflection direction about said axis including means for moving said magnetic field relative to said cathode and said platform in a selected path about said cathode-platform axis.

Claim 6

Sputtering apparatus as defined in claim 6 in which said establishing means comprises a plurality of electromagnets mounted in diametrically opposed pairs externally of said chamber at uniformly spaced locations about said axis; and said moving means comprises a multiphase alternating current power source connected to supply peak current to said electromagnets in succession to cause the peak magnetic field to rotate about said cathode-platform axis.

Claim 7

Sputtering apparatus as defined in claim 7 which further includes: a plurality of magnetic pole pieces mounted in said chamber, each of said pole pieces individually being aligned respectively with one of said electromagnets.

Claim 8

Sputtering apparatus as defined in claim 6 which further includes: means for supporting a grid-like screen, of a material dissimilar to said surface of said cathode, in said chamber at a location between said cathode and said support platfOrm.

Claim 9

Sputtering apparatus as defined in claim 9 which further includes: means for confining said magnetic field to a region spaced from said substrate, and in which said screen is supported within the space between said support platform and said magnetic field.