Patent US3653989A successfully refreshed from Google Patents.
US3653989A
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Zn DIFFUSION INTO GAP
Assignee: RCA Corp
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Filing: 1970-04-02
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Granted: 1972-04-04
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Expires: 1990-04-02
Abstract
Abstract Zinc is diffused into N type gallium phosphide to form a PN junction therein. The zinc diffusion takes place in vacuum at temperatures between about 800*-950* C. from a ZnP2 source.
Inventors
- 👤 Alois Erhard Widmer
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 08:56
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/80; H10D62/85; H10D62/854; H10H; H10H20/00; H10H20/80; Y; Y10; Y10S; Y10S438/00; Y10S438/909
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
25 words
A process for forming a PN junction in GaP comprising the step of diffusing zinc from a ZnP2 source of zinc Into N type GaP.
Claim 2
Dependent Claim
30 words
The process for forming a PN junction in GaP recited in claim 2 wherein said N type GaP and said ZnP2 zinc source are heated together in an evacuated container.
Claim 3
Dependent Claim
55 words
A process for forming a PN junction in GaP comprising the steps of enclosing N type GaP and ZnP2 in an evacuated chamber and heating said chamber to a temperature of between 800*-950* C. for a time sufficient for zinc to diffuse into said N type GaP so as to form a PN junction therein.
Claim 4
Dependent Claim
93 words
A process for forming a PN junction in GaP comprising the steps of enclosing N type GaP and ZnP2 in an evacuated chamber, said N type GaP and said ZnP2 being separated from each other, heating said chamber and its contents to a temperature below the melting point of said GaP but sufficient to diffuse zinc therein to form said junction, the temperature of said ZnP2, being below the temperature of said GaP, and diffusing zinc into said GaP for a time sufficient to form a PN junction therein at any desired depth.
Claim 5
Dependent Claim
18 words
The process recited in claim 5 wherein the temperature of said GaP and ZnP2 is from 800*-950* C.
Claim 6
Dependent Claim
51 words
The process recited in claim 5 wherein said evacuated chamber is at a pressure of about 10 6 torr and wherein the GaP and ZnP2 are heated to a temperature of between 800* and 875* C., the temperature of said ZnP2 being from 5*-10* C. below the temperature of said GaP.
Claim 7
Dependent Claim
17 words
The process recited in claim 7 wherein said N type GaP is epitaxially grown selenium doped GaP.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1975-04-04 | 1975-10-04 | 1976-04-04 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1979-04-04 | 1979-10-04 | 1980-04-04 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1983-04-04 | 1983-10-04 | 1984-04-04 | $7700.00 | Window Closed / Lapsed |