US3354009A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of forming a fabricating semiconductor by doubly diffusion
Assignee: International Business Machines Corp
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Filing: 1965-06-29
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Granted: 1967-11-21
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Expires: 1985-06-29
Abstract
No abstract record available.
Inventors
- 👤 Mandel Kay
- 👤 Jr Frederick F Morehead
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 07:02
CPC Classifications
H; H10; H10P; H10P32/00; H10P32/10; H10P32/12; C; C30; C30B; C30B1/00; C30B1/10; H10H; H10H20/00; H10H20/80; H10P32/17; Y; Y10; Y10S; Y10S252/00; Y10S252/95; Y10S252/951
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
162 words
A METHOD FOR FABRICATING TERNARY SEMICONDUCTOR MATERIALS WHICH INCLUDES THE STEPS OF: (A) ESTABLISHING A HEATING AND VAPORIZING ZONE; (B) PLACING A CADMIUM TELLURIDE SEMICONDUCTOR BINARY COMPOUND CRYSTAL INTO ONE PORTION OF SAID HEATING AND VAPORIZING ZONE; (C) PLACING A RESERVOIR OF DIFFUSING MATERIAL IN ANOTHER PORTION OF SAID HEATING AND VAPORIZING ZONES, SAID DIFFUSING MATERIAL BEING A MIXTURE OF FROM 4% TO 49% OF ZINC, 49% TO 99% OF CADMIUM, AND 1% PHOSPHOROUS; (D) DOUBLY DIFFUSING THE ZINC AND PHOSPHOROUS INTO SAID CADMIUM TELLURIDE CRYSTALS UNDER A CADMIUM ATMOSPHERE, SAID DOUBLE DIFFUSION BEING EFFECTED BY HEATING SAID CADMIUM TELLURIDE CRYSTALS TO A TEMPERATURE BELOW ITS MELTING AND DISSOCIATION POINTS AND WITHIN THE RANGE OF 650* TO 1000*C., WHILE MAINTAINING THE TEMPERATURE OF SAID DIFUSION MIXTURE AT ABOUT 50* BELOW THAT AT WHICH THE CADMIUM TELLURIDE CRYSTALS IS HEATED; AND (E) HEATING FOR A PERIOD EXTENDING FROM ABOUT ONE DAY TO TWO WEEKS TO THEREBY RECOVER A DOUBLY DIFFUSED SEMICONDUCTOR TERNARY MATERIAL.
Claim 2
Independent Claim
162 words
A METHOD FOR FABRICATING TERNARY SEMICONDUCTOR MATERIALS WHICH INCLUDES THE STEPS OF: (A) ESTABLISHING A HEATING AND VAPORIZING ZONE; (B) PLACING A CADMIUM TELLURIDE SEMICONDUCTOR BINARY COMPOUND CRYSTAL INTO ONE PORTION OF SAID HEATING AND VAPORIZING ZONE; (C) PLACING A RESERVOIR OF DIFFUSING MATERIAL IN ANOTHER PORTION OF SAID HEATING AND VAPORIZING ZONES, SAID DIFFUSING MATERIAL BEING A MIXTURE OF FROM 4% TO 49% OF ZINC, 49% TO 99% OF CADMIUM, AND 1% PHOSPHOROUS; (D) DOUBLY DIFFUSING THE ZINC AND PHOSPHOROUS INTO SAID CADMIUM TELLURIDE CRYSTALS UNDER A CADMIUM ATMOSPHERE, SAID DOUBLE DIFFUSION BEING EFFECTED BY HEATING SAID CADMIUM TELLURIDE CRYSTALS TO A TEMPERATURE BELOW ITS MELTING AND DISSOCIATION POINTS AND WITHIN THE RANGE OF 650* TO 1000*C., WHILE MAINTAINING THE TEMPERATURE OF SAID DIFUSION MIXTURE AT ABOUT 50* BELOW THAT AT WHICH THE CADMIUM TELLURIDE CRYSTALS IS HEATED; AND (E) HEATING FOR A PERIOD EXTENDING FROM ABOUT ONE DAY TO TWO WEEKS TO THEREBY RECOVER A DOUBLY DIFFUSED SEMICONDUCTOR TERNARY MATERIAL.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1970-11-20 | 1971-05-22 | 1971-11-21 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1974-11-20 | 1975-05-22 | 1975-11-21 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1978-11-20 | 1979-05-22 | 1979-11-21 | $7700.00 | Window Closed / Lapsed |