US3260624A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of producing a p-n junction in a monocrystalline semiconductor device
Assignee: Siemens and Halske AG
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Filing: 1962-05-08
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Granted: 1966-07-12
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Expires: 1982-05-08
Abstract
No abstract record available.
Inventors
- 👤 Wiesner Richard
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 00:03
CPC Classifications
H; H10; H10P; H10P95/00; C; C30; C30B; C30B25/00; C30B25/02; H10D; H10D99/00; Y; Y10; Y10S; Y10S148/00; Y10S148/037; Y10S148/039; Y10S148/049; Y10S148/151; Y10S438/00; Y10S438/914; Y10S438/919; Y10S438/923
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
157 words
THE METHOD OF PRODUCING A P-N JUNCTION IN A MONOCRYSTALLINE SEMICONDUCTOR DEVICE, WHICH COMPRISES THE STEPS OF PYROLYTICALLY PRECIPITATING FROM A GASEOUS COMPOUND A PURE MONOCRYSTALLINE SEMICONDUCTOR LAYER UPON A MONOCRYSTALLINE SUBSTRATUM AND THE SAME SEMICONDUCTOR SUBSTANCE HIGHLY DOPED WITH DONOR-TYPE AND ACCEPTOR-TYPE ACTIVATOR ATOMS AND RESPECTIVELY DIFFERENT DIFFUSION COEFFICIENTS, THE ACTIVATOR ATOMS HAVING THE LOWER DIFFUSION COEFFICIENT ARE PRESENT IN THE SUBSTRATUM IN A QUANTITY PROPONDERANT OVER THAT OF THE ACTIVATOR ATOMS HAVING THE HIGHER DIFFUSION COEFFICIENT, AHD HEATED TO PYROLYTIC REACTION TEMPERATURE, AND SUBJECTING THE SUBSTRATUM AND LAYER TO DIFFUSION TEMPERATURE FOR A PERIOD OF TIME SUFFICIENT FOR ONLY ONE OF SAID TWO TYPES OF ACTIVATOR ATOMS TO DIFLFUSE FROM THE SUBSTRATUM INTO AND THROUGH SAID GROWN LAYER AND TO ESSENTIALLY CAUSE THE DESIRED CONDUCTANCE TYPE AT THE LAYER SIDE REMOTE FROM SAID SUBSTRATUM, SAID PERIOD BEING TOO SHORT FOR THE ACTIVATOR ATOMS OF THE OTHER TYPE TO REACH AN APPRECIABLE PORTION OF SAID LAYER.
Claim 2
Independent Claim
157 words
THE METHOD OF PRODUCING A P-N JUNCTION IN A MONOCRYSTALLINE SEMICONDUCTOR DEVICE, WHICH COMPRISES THE STEPS OF PYROLYTICALLY PRECIPITATING FROM A GASEOUS COMPOUND A PURE MONOCRYSTALLINE SEMICONDUCTOR LAYER UPON A MONOCRYSTALLINE SUBSTRATUM AND THE SAME SEMICONDUCTOR SUBSTANCE HIGHLY DOPED WITH DONOR-TYPE AND ACCEPTOR-TYPE ACTIVATOR ATOMS AND RESPECTIVELY DIFFERENT DIFFUSION COEFFICIENTS, THE ACTIVATOR ATOMS HAVING THE LOWER DIFFUSION COEFFICIENT ARE PRESENT IN THE SUBSTRATUM IN A QUANTITY PROPONDERANT OVER THAT OF THE ACTIVATOR ATOMS HAVING THE HIGHER DIFFUSION COEFFICIENT, AHD HEATED TO PYROLYTIC REACTION TEMPERATURE, AND SUBJECTING THE SUBSTRATUM AND LAYER TO DIFFUSION TEMPERATURE FOR A PERIOD OF TIME SUFFICIENT FOR ONLY ONE OF SAID TWO TYPES OF ACTIVATOR ATOMS TO DIFLFUSE FROM THE SUBSTRATUM INTO AND THROUGH SAID GROWN LAYER AND TO ESSENTIALLY CAUSE THE DESIRED CONDUCTANCE TYPE AT THE LAYER SIDE REMOTE FROM SAID SUBSTRATUM, SAID PERIOD BEING TOO SHORT FOR THE ACTIVATOR ATOMS OF THE OTHER TYPE TO REACH AN APPRECIABLE PORTION OF SAID LAYER.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1969-07-11 | 1970-01-10 | 1970-07-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1973-07-11 | 1974-01-10 | 1974-07-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1977-07-11 | 1978-01-10 | 1978-07-12 | $7700.00 | Window Closed / Lapsed |