US3326730A
Expired / Lapsed
US
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Preparing group ii-vi compound semiconductor devices
Assignee: International Business Machines Corp
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Filing: 1965-04-13
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Granted: 1967-06-20
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Expires: 1985-04-13
Abstract
No abstract record available.
Inventors
- 👤 Mandel Kay
- 👤 Jr Frederick F Morehead
- 👤 Joseph A Kucza
- 👤 William N Hammer
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 00:36
CPC Classifications
H; H10; H10P; H10P32/00; H10P32/10; H10P32/12; H10P32/17; Y; Y10; Y10S; Y10S252/00; Y10S252/95; Y10S252/951
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
130 words
A METHOD FOR PRODUCING HIGHLY DOPED SEMICONDUCTOR DEVICES WHICH INCLUDES THE STEPS OF: ESTABLISHING A HEATING AND VAPORIZING ZONE; PLACING A CDTE SEMICONDUCTOR BINARY COMPOUND CRYSTAL IN ONE PORTION OF SAID HEATING AND VAPORIZING ZONE; PLACING A RESERVOIR OF DIFFUSING MATERIAL IN ANOTHER PORTION OF SAID HEATING AND VAPORIZING ZONE, SAID DIFFUSING MATERIAL BEING A MIXTURE OF A 90-99.5% OF CD AND 0.5-10% OF P; HEATING SAID SEMICONDUCTOR BINARY COMPOUND CRYSTAL TO A TEMPERATURE BELOW ITS MELTING AND DISSOCIATION POINTS AND WITHIN THE RANGE OF 650-1000*C.; MAINTAINING THE TEMPERATURE OF SAID DIFFUSION MIXTURE AT ABOUT 50*C. BELOW THAT AT WHICH SAID BINARY CRYSTAL IS HEATED; AND AFTER A HEATING PERIOD EXTENDING BETWEEN ABOUT ONE DAY AND TWO WEEKS RECOVERING A DOPED SEMICONDUCTOR BINARY COMPOUND CRYSTAL HAVING A SHALLOW ACCEPTOR LEVEL.
Claim 2
Independent Claim
130 words
A METHOD FOR PRODUCING HIGHLY DOPED SEMICONDUCTOR DEVICES WHICH INCLUDES THE STEPS OF: ESTABLISHING A HEATING AND VAPORIZING ZONE; PLACING A CDTE SEMICONDUCTOR BINARY COMPOUND CRYSTAL IN ONE PORTION OF SAID HEATING AND VAPORIZING ZONE; PLACING A RESERVOIR OF DIFFUSING MATERIAL IN ANOTHER PORTION OF SAID HEATING AND VAPORIZING ZONE, SAID DIFFUSING MATERIAL BEING A MIXTURE OF A 90-99.5% OF CD AND 0.5-10% OF P; HEATING SAID SEMICONDUCTOR BINARY COMPOUND CRYSTAL TO A TEMPERATURE BELOW ITS MELTING AND DISSOCIATION POINTS AND WITHIN THE RANGE OF 650-1000*C.; MAINTAINING THE TEMPERATURE OF SAID DIFFUSION MIXTURE AT ABOUT 50*C. BELOW THAT AT WHICH SAID BINARY CRYSTAL IS HEATED; AND AFTER A HEATING PERIOD EXTENDING BETWEEN ABOUT ONE DAY AND TWO WEEKS RECOVERING A DOPED SEMICONDUCTOR BINARY COMPOUND CRYSTAL HAVING A SHALLOW ACCEPTOR LEVEL.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1970-06-19 | 1970-12-19 | 1971-06-20 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1974-06-19 | 1974-12-19 | 1975-06-20 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1978-06-19 | 1978-12-19 | 1979-06-20 | $7700.00 | Window Closed / Lapsed |