US3033791A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of manufacturing high-ohmic cadmium telluride for use in semiconductor devices or photo-sensitive devices
Assignee: US Philips Corp
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Filing: 1959-06-30
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Granted: 1962-05-08
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Expires: 1979-06-30
Abstract
No abstract record available.
Inventors
- 👤 Nobel Dirk De
- 👤 Kroger Ferdinand Anne
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 02:47
CPC Classifications
H; H10; H10P; H10P95/00; H10P95/90; C; C30; C30B; C30B1/00; C30B1/02; C30B13/00; C30B29/00; C30B29/10; C30B29/46; C30B29/48; C30B33/00; Y; Y10; Y10S; Y10S252/00; Y10S252/95; Y10S252/951
Claims Analysis
Total Claims: 1
Claim 1
Independent Claim
107 words
A METHOD OF MAKING A CADMIUM TELLURIDE SEMICONDUCTOR BODY CONTAINING A PORTION WHOSE RESISTIVITY IS AT LEAST 106 OHM-CM., COMPRISING THE STEPS PROVIDING THE SAID CADMIUM TELLURIDE PORTION WITH A PREDOMINANT DONOR IMPURITY CONCENTRATION OF BETWEEN 1016 AND 1018 ATOMS/CM.3, AND HEATING SAID DONOR-DOPED PORTION AT A TEMPARATURE BETWEEN 500*C. AND 1000*C. IN THE PRESENCE OF AN ATMOSPHERE OF CADMIUM VAPOR AT A PARTIAL PRESSURE BELOW THE PARTIAL CADMIUM PRESSURE OF STOICHIOMETRIC CADMIUM TELLURIDE AT THE SAID TEMPERATURE AND ABOVE THE PARTIAL CADMIUM PRESSURE OF SOLID CADMIUM TELLURIDE IN EQUILIBRIUM WITH ITS LIQUID AT THE SAID TEMPERATURE UNTIL THE SAID PORTION ACQUIRES THE DESIRED RESISTIVITY WHEN COOLED.
References Cited (Backward Citations)
US2916678A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1965-05-07 | 1965-11-06 | 1966-05-08 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1969-05-07 | 1969-11-06 | 1970-05-08 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1973-05-07 | 1973-11-06 | 1974-05-08 | $7700.00 | Window Closed / Lapsed |