Semiconductive chip attachment method

Claim 1

The method of mounting a semiconductive chip on a substrate having a circuit pattern with contact regions conforming to contact regions on said chip, said method comprising the steps of masking the surface of one of said chips and said substrate except for said contact regions, placing the masked surface in contact with a melt of a metal melting at a temperature above the chip bonding temperature and below the melting temperature of said chip and substrate materials, removing heat from said surface while it is in contact with said melt to progressively solidify melt metal onto said contact regions, concurrently slowly withdrawing said element from said melt at a rate commensurate with said progressive solidification to form solid contact spires of predetermined height on said contact regions, registering said contact spires with the contact regions on the other element and bonding the registered portions together while maintaining the integrity of the contact spires to maintain the bonded chip and substrate elements in mutually spaced relationship.

Claim 2

The method of mounting a semiconductive chip on a substrate having a circuit pattern with contact regions conforming to contact regions on said chip, said method comprising the steps of masking the surface of one of said chips and said substrate except for said contact regions, placing the masked surface in contact with a melt of a metal melting at a temperature above the chip bonding temperature and below the melting temperature of said chip and substrate materials, removing heat from said surface while it is in contact with said melt to progressively solidify melt metal onto said contact regions, concurrently slowly withdrawing said element from said melt at a rate commensurate with said progressive solidification to form solid contact spires of predetermined height on said contact regions, registering said contact spires with the contact regions on the other element and bonding the registered portions together while maintaining the integrity of the contact spires to maintain the bonded chip and substrate elements in mutually spaced relationship.

Claim 4

The method of forming integral contact leads on a semiconductive chip and bonding said chip to a complementary supportiNg substrate having conductors comprising the steps of forming a plurality of discrete electronic device regions on a semiconductor slice, forming a plurality of electrodes on the surface of said slice for each discrete device region, forming a spire base layer on at least a portion of each of said electrodes, masking the balance of said surface and said electrode, placing said masked surface in contact with a melt of spire metal, cooling said slice while slowly withdrawing it from said melt to progressively solidify melt metal as extended sprires of predetermined height on said base layer, said melt metal having a melting point below that of the semiconductive material and above the temperature at which it is to be bonded to a substrate, dicing the slice to produce a plurality of chips, each of which contain a discrete electronic device region, placing said chip on a substrate having a conductor pattern including metal coated regions for registration with said chip spires, contacting said metal coated regions with the tips of said spires, and bonding said spires to said regions to connect said chip to the conductors of said substrate.

Claim 5

The method of forming integral contact leads on a semiconductive chip and bonding said chip to a complementary supportiNg substrate having conductors comprising the steps of forming a plurality of discrete electronic device regions on a semiconductor slice, forming a plurality of electrodes on the surface of said slice for each discrete device region, forming a spire base layer on at least a portion of each of said electrodes, masking the balance of said surface and said electrode, placing said masked surface in contact with a melt of spire metal, cooling said slice while slowly withdrawing it from said melt to progressively solidify melt metal as extended sprires of predetermined height on said base layer, said melt metal having a melting point below that of the semiconductive material and above the temperature at which it is to be bonded to a substrate, dicing the slice to produce a plurality of chips, each of which contain a discrete electronic device region, placing said chip on a substrate having a conductor pattern including metal coated regions for registration with said chip spires, contacting said metal coated regions with the tips of said spires, and bonding said spires to said regions to connect said chip to the conductors of said substrate.