Patent US3634150A successfully refreshed from Google Patents.
US3634150A
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US
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Method for forming epitaxial crystals or wafers in selected regions of substrates
Assignee: General Electric Co
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Filing: 1969-06-25
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Granted: 1972-01-11
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Expires: 1989-06-25
Abstract
Abstract A method for growing semiconductor material on insulating or conducting substrates or in small apertures in insulating or conducting substrates is disclosed. The method comprises masking the surface of a nucleating semiconductor substrate with an appropriately apertured mask, epitaxially growing semiconductor material through the apertures and separating the mask with its grown semiconductor material from the nucleating substrate to produce either discrete crystals in a substrate or a crystal wafer on a substrate.
Inventors
- 👤 Fordyce H Horn
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 13:29
CPC Classifications
C; C30; C30B; C30B25/00; C30B25/02; C30B25/18; H; H10; H10P; H10P95/00; Y; Y10; Y10S; Y10S117/00; Y10S117/915; Y10S148/00; Y10S148/026; Y10S148/043; Y10S148/049; Y10S148/052; Y10S148/085; Y10S148/105; Y10S148/106; Y10S148/135; Y10S148/145; Y10S148/15; Y10S148/164; Y10S438/00; Y10S438/942; Y10S438/945
Claims Analysis
Total Claims: 0
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References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1975-01-10 | 1975-07-12 | 1976-01-11 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1979-01-10 | 1979-07-12 | 1980-01-11 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1983-01-10 | 1983-07-12 | 1984-01-11 | $7700.00 | Window Closed / Lapsed |