Patent US3629609A successfully refreshed from Google Patents.
← Back to Patent Explorer
US3629609A Expired / Lapsed US ⏱️ 0.0 years remaining

Ttl input array with bypass diode

Assignee: AT&T Inc
•
Filing: 1970-02-20
•
Granted: 1971-12-21
•
Expires: 1990-02-20
📄 Original PDF 🌐 Google Patents 🔄 Sync Now

Abstract

Abstract A transistor-transistor logic gate characterized by a low inverse alpha current and high noise margins includes a multiemitter input array and a unique biasing arrangement. This arrangement comprises a diode-connected transistor in combination with a pair of resistors connected across the base-collector junction of the multiemitter transistor for maintaining an optimum biasing voltage across the base-collector junction of the multiemitter transistor regardless of the value of signals applied at the emitters thereof.

Inventors

  • 👤 Richard Alan Pedersen
  • 👤 Ray Allen Reed
  • 👤 Milton Dean Underwood

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-27 10:41
CPC Classifications
H; H03; H03K; H03K19/00; H03K19/01; H03K19/013; H03K19/02; H03K19/08; H03K19/082; H03K19/088

Claims Analysis

Total Claims: 8
Claim 1
Independent Claim 191 words
In a logic gate, a. a transistor having base and collector terminals and at least one emitter terminal, b. a source of DC potential, c. a biasing resistor having first and second terminals, said first terminal being connected to said source of DC potential, d. first means having first and second terminals for controlling the bias at said collector terminal, said first terminal of said first means being connected to said second terminal of said resistor, and said second terminal of said first means being connected to said collector terminal wherein said first means includes a diode, e. second means having first and second terminals for applying bias signals at said base terminal, said first terminal of said second means being connected to said second terminal of said resistor, and said second terminal of said second means being connected to said base terminal, and f. third means having first and second terminals for bypassing a portion of said bias signals at said base terminal, said first terminal of said third means being connected to said base terminal, and said second terminal of said third means being connected to said collector terminal.
Claim 2
Dependent Claim 191 words
In a logic gate, a. a transistor having base and collector terminals and at least one emitter terminal, b. a source of DC potential, c. a biasing resistor having first and second terminals, said first terminal being connected to said source of DC potential, d. first means having first and second terminals for controlling the bias at said collector terminal, said first terminal of said first means being connected to said second terminal of said resistor, and said second terminal of said first means being connected to said collector terminal wherein said first means includes a diode, e. second means having first and second terminals for applying bias signals at said base terminal, said first terminal of said second means being connected to said second terminal of said resistor, and said second terminal of said second means being connected to said base terminal, and f. third means having first and second terminals for bypassing a portion of said bias signals at said base terminal, said first terminal of said third means being connected to said base terminal, and said second terminal of said third means being connected to said collector terminal.
Claim 3
Dependent Claim 27 words
A circuit as in claim 1 wherein said diode is a diode-connected transistor having material, manufacturing process and temperature characteristics substantially identical to those of said transistor.
Claim 4
Dependent Claim 204 words
In combination in a transistor logic gate a. a first multiemitter transistor, b. a source of DC potential, c. a point of reference potential, d. first and second series-connected resistors coupling said source of DC potential to the base of said first multiemitter transistor, e. a first diode connected between the junction of said first and second resistors and the collector of said first multiemitter transistor, f. a third resistor connected between the base and collector of said first multiemitter transistor, g. a second multiemitter transistor, h. a fourth resistor connecting said source of DC potential to the collector of said second multiemitter transistor, i. means connecting the base of said second multiemitter transistor to the collector of said first multiemitter transistor, j. means connecting one emitter of said second multiemitter transistor to the base of said second multiemitter transistor, k. means connecting a second emitter of said second multiemitter transistor to said point of reference potential, and l. a network comprising a diode and a resistor connected in series, said network being connected between the collector of said second multiemitter transistor and said point of reference potential, said network being arranged to control the voltage at said collector of said second multiemitter transistor.
Claim 5
Dependent Claim 204 words
In combination in a transistor logic gate a. a first multiemitter transistor, b. a source of DC potential, c. a point of reference potential, d. first and second series-connected resistors coupling said source of DC potential to the base of said first multiemitter transistor, e. a first diode connected between the junction of said first and second resistors and the collector of said first multiemitter transistor, f. a third resistor connected between the base and collector of said first multiemitter transistor, g. a second multiemitter transistor, h. a fourth resistor connecting said source of DC potential to the collector of said second multiemitter transistor, i. means connecting the base of said second multiemitter transistor to the collector of said first multiemitter transistor, j. means connecting one emitter of said second multiemitter transistor to the base of said second multiemitter transistor, k. means connecting a second emitter of said second multiemitter transistor to said point of reference potential, and l. a network comprising a diode and a resistor connected in series, said network being connected between the collector of said second multiemitter transistor and said point of reference potential, said network being arranged to control the voltage at said collector of said second multiemitter transistor.
Claim 6
Dependent Claim 146 words
In a logic gate responsive to a plurality of sources of logic signals, a. a transistor having base and collector terminals and a plurality of emitter terminals, b. said plurality of soUrces of logic signals each arranged to apply logic signals to a corresponding one of said emitter terminals, c. a source of DC potential, d. a bias resistor having first and second terminals, said first terminal being connected to said source of DC potential, and e. first means including a diode saturable in response to high-level signals on all of said emitter terminals, for controllably applying bias signals from said second terminal of said bias resistor to said base and collector terminals, thereby limiting undesired inverse internal currents from said collector terminal to one or more of said emitter terminals while maintaining the logic threshold at each of said emitter terminals at a satisfactory level.
Claim 7
Dependent Claim 146 words
In a logic gate responsive to a plurality of sources of logic signals, a. a transistor having base and collector terminals and a plurality of emitter terminals, b. said plurality of soUrces of logic signals each arranged to apply logic signals to a corresponding one of said emitter terminals, c. a source of DC potential, d. a bias resistor having first and second terminals, said first terminal being connected to said source of DC potential, and e. first means including a diode saturable in response to high-level signals on all of said emitter terminals, for controllably applying bias signals from said second terminal of said bias resistor to said base and collector terminals, thereby limiting undesired inverse internal currents from said collector terminal to one or more of said emitter terminals while maintaining the logic threshold at each of said emitter terminals at a satisfactory level.
Claim 8
Dependent Claim 32 words
Apparatus as in claim 4 wherein said first means clamping further comprises a voltage divider for applying across said base and collector terminals a portion of the voltage drop across said diode.

References Cited (Backward Citations)

US3233125A Cited
US3312833A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1974-12-20 1975-06-21 1975-12-21 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1978-12-20 1979-06-21 1979-12-21 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1982-12-20 1983-06-21 1983-12-21 $7700.00 Window Closed / Lapsed

Assigned Categories & Tags

No categories assigned to this patent yet.

Assign Category Tag