Patent US3628185A successfully refreshed from Google Patents.
US3628185A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Solid-state high-frequency source
Assignee: AT&T Inc
•
Filing: 1970-03-30
•
Granted: 1971-12-14
•
Expires: 1990-03-30
Abstract
Abstract A P+PNN+ semiconductive diode is used as the active element in a solid-state microwave source in either an IMPATT, TRAPATT or combination mode of operation. Ion implantation is used in the fabrication of the diode to achieve close control of the doping profile required to realize the electric field distribution important for efficient operation.
Inventors
- 👤 William Joshua Evans
- 👤 Ralph Lawrence Johnston
- 👤 Donald Lee Scharfetter
- 👤 Thomas Edward Seidel
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 05:50
CPC Classifications
H; H03; H03B; H03B9/00; H03B9/12; H03B9/14; H03B9/145; H03B9/146; H10; H10D; H10D99/00; H03B2009/126
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
44 words
A microwave oscillator in accordance with claim 1 which further includes a structure resonant at a subharmonic of said first-mentioned resonant frequency and provision for abstracting power from the source selectively at said subharmonic while containing within the source power at the resonant frequency.
Claim 2
Dependent Claim
103 words
A microwave oscillator comprising a section of coaxial transmission line, a P+PNN+ semiconductive diode mounted serially in the inner conductor of the line at one end of the line, means located adjacent the diode along the line providing a lumped capacitance for forming a resonant circuit with the diode at a microwave frequency, and means spaced along the line away from the diode for forming a low-pass filter reflecting power at said microwave frequency but passing power at a desired subharmonic of said microwave frequency, the spacing of this means from the diode corresponding to one half the wavelength of the desired subharmonic.
Claim 3
Dependent Claim
30 words
A microwave oscillator in accordance with claim 3 in which the diode is asymmetric having one intermediate region of lower doping than the other intermediate region of opposite conductivity type.
Claim 4
Dependent Claim
54 words
A microwave oscillator in accordance with claim 4 in which the doping and thickness of each of the two intermediate zones of the diode are such that at the avalanche breakdown the electric field falls substantially to zero at each of the two interfaces between zones of relatively high resistivity and relatively low resistivity.
Claim 5
Dependent Claim
63 words
A microwave oscillator in accordance with claim 4 in which the doping and thickness of each of the two intermediate zones of the diode are such that at avalanche breakdown the electric field falls substantially to zero at one of the two interfaces between zones of relatively high resistivity and relatively low resistivity and still has a substantial value At the other interface.
Claim 6
Dependent Claim
52 words
A microwave oscillator in accordance with claim 5 for operation in the range between 25 gHz and 150 gHz in which the net doping-space charge thickness product is in the range between 2 X 1012 and 6 X 1012 and the intermediate zones have a thickness between 1.2 microns and 0.2 micron.
Claim 7
Dependent Claim
33 words
A microwave oscillator in accordance with claim 6 in which the net doping-space charge width product for one intermediate zone of the diode is about one fifth that for the other intermediate zone.
Claim 8
Dependent Claim
79 words
A microwave oscillator which employs a semiconductive diode as a negative resistance characterized by the improvement that the diode comprises in succession first and second regions of one conductivity type and relatively low and relatively high resistivities, respectively, and third and fourth regions of the opposite conductivity type and relatively high and low resistivities, respectively, and in that the diode is included in a resonant structure and is designed to operate in a trapped plasma avalanche triggered transit mode.
Claim 9
Dependent Claim
44 words
A microwave oscillator in accordance with claim 9 further characterized in that the diode is included in a resonant structure and is asymmetric for operation in part in an impact avalanche transit time mode and in part in a trapped plasma triggered transit mode.
Claim 10
Dependent Claim
98 words
A microwave oscillator for operation in the 25 gHz to 150 gHz range which employs a semiconductive diode as a negative resistance characterized by the improvement that the diode comprises in succession first and second regions of one conductivity type and relatively low and relatively high resistivities, respectively, and third and fourth regions of the opposite conductivity type and relatively high and low resistivities, respectively, and in that the diode is included in a structure resonant in said operating frequency range and is designed to operate in an impact ionization avalanche transit time mode in said frequency range.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1974-12-13 | 1975-06-14 | 1975-12-14 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1978-12-13 | 1979-06-14 | 1979-12-14 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1982-12-13 | 1983-06-14 | 1983-12-14 | $7700.00 | Window Closed / Lapsed |