US3620692A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Mounting structure for high-power semiconductor devices
Assignee: RCA Corp
•
Filing: 1970-04-01
•
Granted: 1971-11-16
•
Expires: 1990-04-01
Abstract
Abstract The structure includes a thick member having a thermal expansion coefficient closely matching that of the device, and a thin metal layer having high thermal diffusivity disposed on the thick member. The metal layer is between 2.0 and 20.0 mils thick, to provide sufficient thermal diffusivity between the device and the thick member, and still allow the thermal expansion coefficient of the structure to be determined by the thick member. The device is mounted on the exposed surface of the metal layer.
Inventors
- 👤 David Louis Franklin
- 👤 Leon Martin Balents
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 09:35
CPC Classifications
H; H10; H10W; H10W72/00; H10W72/30; H10W72/071; H10W72/073; H10W72/07331; H10W72/07336; H10W72/07337; H10W72/50; H10W72/531; H10W72/536; H10W72/5363; H10W72/851; H10W72/874; H10W72/884; H10W90/00; H10W90/701; H10W90/751; H10W90/753; H10W90/754; Y; Y10; Y10S; Y10S428/00; Y10S428/922; Y10S428/923; Y10S428/924; Y10S428/926; Y10T; Y10T428/00; Y10T428/12; Y10T428/12493; Y10T428/12528; Y10T428/12535; Y10T428/12611; Y10T428/12736; Y10T428/12743; Y10T428/12771; Y10T428/12806; Y10T428/12826; Y10T428/12833; Y10T428/12861; Y10T428/12882; Y10T428/12986
Claims Analysis
Total Claims: 3
Claim 1
Independent Claim
39 words
A structure according to claim 1, wherein said member is selected from a group consisting of molybdenum, tungsten, aluminum oxide, and beryllium oxide, and wherein said layer is selected from a group consisting of copper, silver, aluminum, and gold.
Claim 2
Dependent Claim
20 words
A structure according to claim 1, wherein said member consists essentially of molybdenum and said layer consists essentially of copper.
Claim 3
Dependent Claim
73 words
A structure for a high-power semiconductor device, comprising: a high-power semiconductor device; a relatively thick member having a major surface, said member having a thermal expansion coefficient closely matching that of said device; a relatively thin metal layer of high thermal conductivity on said surface, said layer being between 2.0 and 20.0 mils thick; a thin gold or nickel plate on said layer; and said device mounted on said gold or nickel plate.
References Cited (Backward Citations)
US2971251A
Cited
US3050667A
Cited
US3178271A
Cited
US3159462A
Cited
US3184824A
Cited
US3268309A
Cited
US3273979A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1974-11-15 | 1975-05-17 | 1975-11-16 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1978-11-15 | 1979-05-17 | 1979-11-16 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1982-11-15 | 1983-05-17 | 1983-11-16 | $7700.00 | Window Closed / Lapsed |