US3619732A
Expired / Lapsed
US
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Coplanar semiconductor switch structure
Assignee: Energy Conversion Devices Inc
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Filing: 1969-05-16
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Granted: 1971-11-09
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Expires: 1989-05-16
Abstract
Abstract A coplanar semiconductor switch structure comprises a pair of electrodes deposited as a film on a suitable substrate with a gap formed between the ends of the electrodes, and an active semiconductor material deposited as a film in the gap between the ends of the electrodes. The ends of the deposited electrodes are so formed as to provide a minimum gap distance therebetween with increasing gap distance on each side thereof to provide a preferred location for the conducting path or paths through the active semiconductor material between the electrodes. The film thickness of the deposited acting semiconductor material is greater than the largest transverse dimension or diameter of the conducting path or paths so to be totally confined in the material. The active semiconductor material may be made to extend substantially equally from each side of the gap between the electrodes so that the current conducting path or paths may be symmetrical about an axis between the electrodes.
Inventors
- 👤 Ronald G Neale
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 01:52
CPC Classifications
H; H10; H10N; H10N70/00; H10N70/20; H10N70/231; G; G11; G11C; G11C11/00; G11C11/21; G11C11/34; G11C11/39; G11C13/00; G11C13/0002; H10N70/801; H10N70/821; H10N70/823; H10N70/841; H10N70/8418
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
57 words
A coplanar semiconductor switch device as defined in claim 1 wherein said deposited film of active semiconductor material extends substantially equally above and below the gap between the ends of said electrodes so as to wholly encompass said at least one conducting path when it is symmetrically centered in the gap between the ends of the electrodes.
Claim 2
Dependent Claim
185 words
A coplanar semiconductor switch device comprising a substrate, a pair of flat and spaced apart coplanar deposited film electrodes on said substrate and having a gap therebetween, and a deposited film of active switchable semiconductor material over the electrodes and over and in the gap between the opposing ends of the electrodes, said active switchable semiconductor material being of relatively high resistance for blocking current and including means for substantially instantaneously establishing at least one current conducting path of relatively low resistance between the ends of the electrodes in response to the application of a voltage to the electrodes above a threshold voltage value, said at least one conducting path between the ends of the electrodes having transverse dimensions greater than the thickness of said deposited film electrodes, said deposited film of active semiconductor material extending substantially equally above and below the gap between the ends of said electrodes and having a thickness greater than the transverse dimensions of said at least one conducting path so as to wholly encompass the same when it is centered in the gap between the ends of said electrodes.
Claim 3
Dependent Claim
68 words
A coplanar semiconductor switch device as defined in claim 3 wherein said pair of spaced apart coplanar deposited film electrodes are on a substrate of nonconductive material, and wherein said substrate is provided with a cavity immediately beneath said gap, and said deposited film of active semiconductor material fills said cavity and gap and extends above said gap a distance substantially equal to the depth of said cavity.
Claim 4
Dependent Claim
22 words
A coplanar semiconductor switch device as defined in claim 4 wherein said substrate is a deposited intermediate substrate film of nonconductive material.
Claim 5
Dependent Claim
21 words
A coplanar semiconductor switch device as defined in claim 5 wherein said cavity extends completely through said deposited intermediate substrate film.
Claim 6
Dependent Claim
28 words
A coplanar semiconductor switch device as defined in claim 3 wherein said pair of spaced apart coplanar deposited film electrodes are on a substrate of active semiconductor material.
Claim 7
Dependent Claim
46 words
A coplanar semiconductor switch device as defined in claim 1 wherein said semiconductor material includes means for reverting said at least one conducting path of relatively low resistance to the relatively high resistance blocking state when the current therethrough decreases below a minimum current holding value.
Claim 8
Dependent Claim
73 words
A coplanar semiconductor switch device as defined in claim 1 wherein said semiconductor material includes means for maintaining said at least one conducting path of relatively low resistance in the relatively low resistance conducting state even though the current therethrough decreases to zero, and for realtering said at least one conducting path of relatively low resistance to the relatively high resistance blocking state in response to a current pulse applied to the electrodes.
Claim 9
Dependent Claim
46 words
A coplanar semiconductor switch device as defined in claim 3 wherein said semiconductor material includes means for reverting said at least one conducting path of relatively low resistance to the relatively high resistance blocking state when the current therethrough decreases below a minimum current holding value.
Claim 10
Dependent Claim
73 words
A coplanar semiconductor switch device as defined in claim 3 wherein said semiconductor material includes means for maintaining said at least one conducting path of relatively low resistance in the relatively low resistance conducting state even though the current therethrough decreases to zero, and for realtering said at least one conducting path of relatively low resistance to the relatively high resistance blocking state in response to a current pulse applied to the electrodes.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1974-11-08 | 1975-05-10 | 1975-11-09 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1978-11-08 | 1979-05-10 | 1979-11-09 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1982-11-08 | 1983-05-10 | 1983-11-09 | $7700.00 | Window Closed / Lapsed |