Patent US3619283A successfully refreshed from Google Patents.
US3619283A
Expired / Lapsed
US
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Method for epitaxially growing thin films
Assignee: International Business Machines Corp
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Filing: 1968-09-27
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Granted: 1971-11-09
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Expires: 1988-09-27
Abstract
Abstract A monocrystalline material of the formulation Hg(1 x)Cd(x)Te is grown epitaxially on a seed or substrate monocrystal of Cd Te, or the like. The reactants are mixed in the vapor phase and held at a temperature which prevents binary combinations. The ternary vapor phase mixture is then rapidly cooled to supersaturation and condensed on the seed crystal substrate. In a dynamic system, the mercury vapor acts as a carrier gas as well as a reactant.
Inventors
- 👤 Donald R Carpenter
- 👤 Gerald W Manley
- 👤 Philip S Mcdermott
- 👤 Ralph J Riley
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 10:18
CPC Classifications
C; C23; C23C; C23C14/00; C23C14/06; C23C14/0623; C23C14/0629; Y; Y10; Y10S; Y10S117/00; Y10S117/906; Y10S117/907; Y10S148/00; Y10S148/017; Y10S148/064; Y10S252/00; Y10S252/95; Y10S252/951; Y10S438/00; Y10S438/935; Y10S438/971
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
37 words
A process in accordance with claim 1 in which said elements are mercury, cadmium, and tellurium, and said stoichiometric ratio is defined by the expression Hg(1 x)Cd(x)Te where x is greater than zero and less than one.
Claim 2
Dependent Claim
32 words
A process in accordance with claim 2 in which said mercury, cadmium, and tellurium are separately volatilized, and said mercury vapor acts as a transport agent for said cadmium and tellurium vapors.
Claim 3
Dependent Claim
34 words
A process in accordance with claim 3 in which said mixture is maintained in the region proximate the deposition substrate at a temperature of at least 50* C. above the temperature of the substrate.
Claim 4
Dependent Claim
80 words
A process in accordance with claim 3 in which said cadmium vapor is generated from a source heated to a temperature of 440* C., said tellurium vapor is generated from a source heated to a temperature of 520* C., said mercury is volatilized with an overpressure of 30 microns, said reaction temperature of the mixture in the region proximate said substrate is 460* C. and said substrate temperature is approximately 280* C. whereby said growth film is Hg0.8 Cd0.2 Te.
Claim 5
Dependent Claim
36 words
A process in accordance with claim 3 in which said mercury vapor is caused to mix successively with vapors of cadmium and tellurium and to carry said mixture to a condensation reaction and vapor growth zone.
Claim 6
Dependent Claim
39 words
A process in accordance with claim 6 in which said mixing is effected by flowing a stream of mercury vapor unidirectionally from a mercury vaporization source through the vaporization sources of said cadmium and tellurium to said growth site.
Claim 7
Dependent Claim
34 words
A process in accordance with claim 7 in which said unidirectional flow is effected by controlling the temperature and pressure of the constituent vapors at the successive vaporization sources and at the growth site.
Claim 8
Dependent Claim
34 words
A process in accordance with claim 8 in which said growth site temperature and the temperature of the vapor phase mixture is controlled to regulate the stoichiometric ratio of said mixture and said film.
Claim 9
Dependent Claim
38 words
A process in accordance with claim 7 in which an excess of mercury vapor is supplied to said stream, and excess mercury remaining from the condensation reaction is collected and returned to said source of said mercury vapor.
Claim 10
Dependent Claim
32 words
A process in accordance with claim 10 in which said mercury vapor is generated from a supply of liquid mercury, and said excess mercury is distilled and returned to said liquid supply.
Claim 11
Dependent Claim
33 words
A process in accordance with claim 7 in which said mercury vapor is generated from a liquid supply, and excess mercury is condensed outside the growth site and returned to said liquid supply.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1974-11-08 | 1975-05-10 | 1975-11-09 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1978-11-08 | 1979-05-10 | 1979-11-09 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1982-11-08 | 1983-05-10 | 1983-11-09 | $7700.00 | Window Closed / Lapsed |