Patent US3594737A successfully refreshed from Google Patents.
US3594737A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Tunnel diode memory-points matrix for reading-writing, device and method of producing
Assignee: Alcatel Lucent SAS
•
Filing: 1968-12-31
•
Granted: 1971-07-20
•
Expires: 1988-12-31
Abstract
Abstract ''''Memory elements'''' matrix for reading-recording device designed in the form of an integrated circuit and enabling nondestructive reading of the data which is recorded there. Each ''''memory element'''' comprising a tunnel diode, a unitunnel diode and a normal diode, these three diodes having cathodes composed of the same silicon substrate in which junctions are formed and in which the load resistor of the tunnel diode may also be formed.
Inventors
- 👤 Marc Haure-Touze
- 👤 Abdelcader Khimeche
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 11:21
CPC Classifications
G; G11; G11C; G11C11/00; G11C11/21; G11C11/34; G11C11/36; G11C11/38; Y; Y10; Y10S; Y10S257/00; Y10S257/926
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
185 words
In a memory-points matrix for a reading-writing device constructed in the form of an integrated circuit which permits nondestructivE readout of the information stored therein, each memory point comprising: a memory tunnel diode in series with a load resistor for bringing said series into two stable states in the presence of a normal supply voltage, two additional diodes connected to the common terminal of said memory diode and said resistor, one of said additional diodes being a unitunnel diode the other of said additional diodes being an ordinary diode, the other two terminals of said additional diodes being connected to erasing and writing control means, said common terminal constituting the cathode terminal of said three diodes, and having the form of a substrate of N-type silicon, the junctions of said memory diode and of said unitunnel diode being formed by alloying in a zone of said substrate in which the active impurity of concentration has been strengthened in order to make it N+type, and the junction of said ordinary diode being formed in a zone of said substrate in which the concentration is not reinforced.
Claim 2
Dependent Claim
185 words
In a memory-points matrix for a reading-writing device constructed in the form of an integrated circuit which permits nondestructivE readout of the information stored therein, each memory point comprising: a memory tunnel diode in series with a load resistor for bringing said series into two stable states in the presence of a normal supply voltage, two additional diodes connected to the common terminal of said memory diode and said resistor, one of said additional diodes being a unitunnel diode the other of said additional diodes being an ordinary diode, the other two terminals of said additional diodes being connected to erasing and writing control means, said common terminal constituting the cathode terminal of said three diodes, and having the form of a substrate of N-type silicon, the junctions of said memory diode and of said unitunnel diode being formed by alloying in a zone of said substrate in which the active impurity of concentration has been strengthened in order to make it N+type, and the junction of said ordinary diode being formed in a zone of said substrate in which the concentration is not reinforced.
Claim 3
Dependent Claim
22 words
The memory-point matrix according to claim 1, wherein the material for producing at least one of said diodes is an aluminum-boron alloy.
Claim 4
Dependent Claim
28 words
The memory-point matrix according to claim 1, wherein said resistor consists of a zone of said substrate which has been made P-type by a diffusion of active impurities.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1974-07-19 | 1975-01-18 | 1975-07-20 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1978-07-19 | 1979-01-18 | 1979-07-20 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1982-07-19 | 1983-01-18 | 1983-07-20 | $7700.00 | Window Closed / Lapsed |