Esaki diode memory with diode coupled readout

Claim 1

A MEMORY MATRIX COMPRISING A PLURALITY OF STORAGE REGISTERS, EACH INCLUDING A TWO TERMINAL BISTABLE SEMICONDUCTOR DEVICE HAVING AT LEAST TWO POSITIVES RESISTANCE REGIONS SEPARATED BY A NEGATIVE RESISTANCE REGION, A RESISTOR AND AN ASYMMETRICAL SEMICONDUCTOR DEVICE, SAID ASYMMETRICAL DEVICE BEING IN SERIES OPPOSED RELATION WITH THE BISTABLE DEVICE, SAID BISTABLE SEMICONDUCTOR DEVICE HAVING A "0" OR A "1" OPERATING STATE ON EITHER POSITIVE RESISTANCE REGION OF THE DEVICE, A FIRST PLURALITY OF INPUT LINES COUPLED TO THE BISTABLE SEMICONDUCTOR DEVICE IN EACH OF THE REGISTERS, A SECOND PLURALITY OF INPUT LINES COUPLED TO THE RESISTORS IN EACH OF THE REGISTERS, AN OUTPUT CIRCUIT CONNECTED TO THE ASYMMETRICAL SEMICONDUCTOR DEVICE LOCATED IN THE REGISTERS COUPLED TO THE SAME LINE IN THE SECOND PLURALITY OF INPUT LINES, MEANS FOR BIASING REVERSELY EACH ASYMMETRICAL SEMICONDUCTOR DEVICE TO A THRESHOLD, MEANS FOR BIASING EACH BISTABLE SEMICONDUCTOR DEVICE INTO ONE OF THE TWO OPERATING STATES, A FIST SIGNAL MEANS COUPLED TO THE FIRST AND SECOND INPUT LINES FOR STORING INFORMATION SELECTIVELY IN EACH OF THE STORAGE REGISTERS, A SECOND SIGNAL MEANS FOR APPLYING READOUT SIGNALS TO AT LEAST ONE OF THE FIRST PLURALITY OF INPUT LINES, SAID READOUT SIGNALS HAVING A MAGNITUDE AND POLARITY TO EXCEED THE THRESHOLD VOLTAGE OF THE ASYMMETRICAL SEMICONDUCTOR DE-VICE WHEN THE BISTABLE SEMICONDUCTOR IS IN THE "1" STATE ONLY TO THEREBY READOUT NON-DESTRUCTIVELY THE INFORMATION STORED IN A SELECTED STORAGE REGISTER, AND MEANS FOR PREVENTING UNWANTED SIGNALS FROM APPEARING ON THE OUTPUT LINE WHEN AN OUTPUT OCCURS THEREON.