US3591838A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor device having an alloy electrode and its manufacturing method
Assignee: Panasonic Holdings Corp
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Filing: 1968-12-23
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Granted: 1971-07-06
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Expires: 1988-12-23
Abstract
Abstract In a semiconductor device a metal electrode film formed by an evaporated gold-chromium alloy containing 3 percent to 13 percent by weight of chromium can not only make low ohmic contact with the semiconductor substrate but can be connected to it mechanically firmly. The lead-tin eutectic alloy can be soldered satisfactorily to the metal electrode film without causing erosion even if the electrode film is dipped in a fused solder solution. The semiconductor device with such a gold-chromium alloy film has great industrial merit since the manufacturing steps, particularly the connection of external electrode lead wires, are greatly simplified.
Inventors
- 👤 Shohei Fujiwara
- 👤 Gota Kano
- 👤 Shunsuke Matsuoka
- 👤 Tsukasa Sawaki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 11:17
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/01; H10D64/011; H10P; H10P14/00; H10P14/40; H10P95/00; H10P95/50; Y; Y10; Y10S; Y10S148/00; Y10S148/02
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
53 words
A semiconductor device according to claim 1, characterized in that said semiconductor substrate is N-type silicon and that said electrode film is formed by a gold-chromium alloy film containing 3 percent to 13 percent by weight of chromium and less than 1 percent by weight of antimony, the remainder consisting substantially of gold.
Claim 2
Dependent Claim
53 words
A semiconductor device according to claim 1, characterized in that said semiconductor substrate is P-type silicon and that said electrode film is formed by a gold-chromium alloy film containing 3 percent to 13 percent by weight of chromium and less than 1 percent by weight of gallium, the remainder consisting substantially of gold.
Claim 3
Dependent Claim
18 words
A semiconductor device according to claim 1, wherein a solder layer is applied to said gold-chromium alloy film.
Claim 4
Dependent Claim
18 words
A semiconductor device according to claim 1 wherein the thickness of said gold-chromium alloy film exceeds 1,000 A.
Claim 5
Dependent Claim
22 words
A semiconductor device according to claim 1 wherein the thickness of said gold-chromium alloy film is between 2,000 A. and 10,000 A.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1974-07-05 | 1975-01-04 | 1975-07-06 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1978-07-05 | 1979-01-04 | 1979-07-06 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1982-07-05 | 1983-01-04 | 1983-07-06 | $7700.00 | Window Closed / Lapsed |