Abstract A plastic encapsulated, high-frequency power transistor assembly having a metallized ceramic base and a metallic heat sink is fabricated by a method which includes the use of a thin, substantially flat lead frame member having at least four inwardly projecting, substantially coplanar electroconductive leads and a bridging portion integral therewith connecting the ends of two of said leads. The lead ends are bonded to corresponding metallized areas of the ceramic base, one of said metallized areas having a centrally extended configuration adapted for die bonding of the semiconductor unit. The assembly is then completed by the attachment of a metallic stud to the opposite side of the ceramic base, wire bonding of the emitter region to the bridging portion of the lead frame, wire bonding of the base region to the remaining lead, and a final step of plastic encapsulation.
A device as defined by claim 1 wherein said semiconductor unit is a high-frequency power transistor, the emitter region of which is connected to said bridging portion.
Claim 2
Dependent Claim
21 words
A device as defined by claim 1 wherein a heat sink member is bonded to the other side of the base.
Claim 3
Dependent Claim
25 words
The semiconductor device of claim 1 and including a plurality of conductor connections providing electrical paths between the bridging portion and the electrode connected thereto.
Claim 4
Dependent Claim
42 words
The semiconductor device of claim 1 in which four metallized areas are provided on said insulating base and three of said leads are bonded to respective metallized areas and a fourth lead and said semiconductor are bonded to said fourth metallized area.
Claim 5
Dependent Claim
39 words
The semiconductor device of claim 5 in which said bridging portion of said two leads bridges said metallized portion to which said semiconductor and said fourth lead are bonded at a position between said semiconductor and said fourth lead.