Semiconductor device with an insulating body interposed between a semiconductor element and a part of a casing

Abstract

Abstract 1,066,200. Semi-conductor devices. INTERNATIONAL STANDARD ELECTRIC CORPORATION. Jan. 28, 1966 [Feb. 16, 1965], No. 3900/66. Heading H1K. A semi-conductor device is separated from a casing by an intermediate body of good heat conducting and electrically insulating properties comprising silicon provided on the side facing the semi-conductor device with an insulating layer of silicon oxide and an overlying metallic bonding layer which does not extend to the margin of the oxide layer. As shown, a silicon body 2 having a thermally produced silicon oxide layer 3 and having an evaporated bonding layer 4 of titanium, aluminium, nickel, and/or chromium, which may be flashed with gold (unless it contains aluminium) by evaporation or electrolytically, is mounted on a molybdenum plate 5, which forms part of the casing 6 and is gold plated at least on the face adjacent body 2 to provide alloying material. A planar transistor 1 is alloyed to bonding layer 4. The evaporated emitter electrode 13 is connected to the casing by gold wires 7, base electrode 16 is connected to a leadin wire 11 by gold wires 9, and bonding layer 4, which is connected to the collector of the transistor, is connected to lead-in wire 10 by gold wires 8. The gold wires are attached by thermocompression bonding. A plurality of junctions may be produced in the intermediate body 2 extending parallel to the major surfaces so that the space charge capacitances of these junctions are connected in series to reduce the emitter-collector lead capacitance.

Inventors

• 👤 Hans Pfander
• 👤 Egon Schulz
• 👤 Anton Wirth

Bibliographic Details