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US3466511A
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US
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Insulated gate field effect transistors with means preventing overvoltage feedthrough by auxiliary structure providing bipolar transistor action through substrate
Assignee: Westinghouse Electric Corp
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Filing: 1967-05-05
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Granted: 1969-09-09
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Expires: 1987-05-05
Abstract
No abstract record available.
Inventors
- 👤 Hung Chang Lin
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 13:30
CPC Classifications
H; H10; H10D; H10D89/00; H10D89/60; H10D89/601
Claims Analysis
Total Claims: 0
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References Cited (Backward Citations)
US3354362A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1972-09-08 | 1973-03-10 | 1973-09-09 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1976-09-08 | 1977-03-10 | 1977-09-09 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1980-09-08 | 1981-03-10 | 1981-09-09 | $7700.00 | Window Closed / Lapsed |