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US3445302A
Expired / Lapsed
US
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Method for fabricating double-diffused semiconductive devices
Assignee: AT&T Inc
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Filing: 1966-12-20
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Granted: 1969-05-20
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Expires: 1986-12-20
Abstract
No abstract record available.
Inventors
- 👤 Donald C Lepiane
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 08:55
CPC Classifications
H; H10; H10P; H10P32/00; Y; Y10; Y10S; Y10S148/00; Y10S148/06; Y10S148/097; Y10S148/151
Claims Analysis
Total Claims: 0
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References Cited (Backward Citations)
US2974073A
Cited
US3145126A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1972-05-19 | 1972-11-18 | 1973-05-20 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1976-05-19 | 1976-11-18 | 1977-05-20 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1980-05-19 | 1980-11-18 | 1981-05-20 | $7700.00 | Window Closed / Lapsed |