Patent US3443170A successfully refreshed from Google Patents.
US3443170A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Ohmic contact to a substrate of insulating material having a doped semiconductive oxide providing a stepped energy gap
Assignee: Individual
•
Filing: 1968-02-09
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Granted: 1969-05-06
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Expires: 1988-02-09
Abstract
No abstract record available.
Inventors
- 👤 Charles F Pulvari
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 21:04
CPC Classifications
H; H10; H10N; H10N30/00; H10N30/80; H10N30/87; H10N30/877; H10N30/878
Claims Analysis
Total Claims: 0
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References Cited (Backward Citations)
US2434143A
Cited
US3290175A
Cited
US3183359A
Cited
US3114066A
Cited
US3330983A
Cited
US3263110A
Cited
US3267317A
Cited
US3360749A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1972-05-05 | 1972-11-04 | 1973-05-06 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1976-05-05 | 1976-11-04 | 1977-05-06 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1980-05-05 | 1980-11-04 | 1981-05-06 | $7700.00 | Window Closed / Lapsed |