Negative resistance semiconductor devices

Claim 1

A NEGATIVE RESISTANCE SEMICONDUCTOR DIODE COMPRISING A HIGH DOPED P+ TYPE SEMICONDUCTOR REGION, A HIGH DOPED N+ TYPE SEMICONDUCTOR REGION, AND AN INTERMEDIATE REGION INTERPOSED BETWEEN SAID P+ TYPE AND N+ TYPE REGIONS AND DOPED WITH PREDETERMINED METAL IMPURITIES OF GROUPS III AND V IN THE PERIODIC TABLE TO HAVE A PREDETERMINED CONDUCTIVE TYPE, SAID INTERMEDIATE REGION BEING FURTHER DOPED WITH DEEP LEVEL IMPURITIES OTHER THAN THE GROUPS III AND V DOPING ELEMENTS IN SUCH A MANNER THAT THE GRADIENT OF CONCENTRATION OF SAID DEEP LEVEL IMPURITIES DECREASES FROM THE SELECTED INTERJUNCTION BETWEEN SAID INTERMEDIATE REGION AND SAID SELECTED HIGH DOPED TYPE SEMICONDUCTOR REGION TOWARD THE CENTRAL PORTION OF SAID INTERMEDIATE REGION, AND THE CONCENTRATION OF SAID DEEP LEVEL IMPURITIES BEING GREATER THAN THE CONCENTRATION OF SAID METAL IMPURITIES OF GROUPS III AND V AT A PORTION OF SAID INTERMEDIATE REGION ADJACENT SAID SELECTED INTERJUNCTION.