US3337779A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Snap-off diode containing recombination impurities
Assignee: Tektronix Inc
•
Filing: 1962-12-17
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Granted: 1967-08-22
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Expires: 1982-12-17
Abstract
No abstract record available.
Inventors
- 👤 James L Bowman
- 👤 William C Myers
- 👤 Robert S Ricks
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 19:46
CPC Classifications
H; H01; H01P; H01P1/00; H01P1/10; H01P1/15; H10; H10D; H10D99/00; H10P; H10P32/00; H10P32/10; H10P32/17; H10P32/171; H10P32/18; H10P95/00; Y; Y10; Y10S; Y10S148/00; Y10S148/062
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
122 words
A SNAPP-OFF, COMPRISING: A BODY OF SINGLE CRYSTALLINE SEMICONDUCTOR MATERIAL CONTAINING DONOR AND ACCEPTOR CURRENT CARRIER DOPING IMPUIRTIES WHICH FORM A PN JUNCTION IN SAID BODY; AND A QUNATITY OF A RECOMBINATION IMPURITY LOCATED WITHIN SAID BODY ON BOTH SIDES OF SAID JUNCTION, AND HAVING A GRADUATED CONCENTRATION WHICH DECREASES AS SAID JUNCTION IS APPROACHED, SAID RECOMBINATION IMPURITY BEING A MATERIAL WHICH REDUCES THE LIFETIME OF THE CURRENT CARRIERS IN SAID BODY BY INTRODUCING RECOMBINATION TRAPS WHICH HAVE ENERGY LEVELS BETWEEN THE DONOR AND ACCEPTOR ENERGY LEVELS OF THE IMPURITY DOPED SEMICONDUCTOR MATERIAL OF SAID BODY IN ORDER TO REDUCE MINORITY CARRIER CHARGE STORAGE IN AREAS REMOTE FROM SAID JUNCTION WHILE MAINTAINING A SUBSTANTIAL AMOUNT OF SAID CHARGE STORAGE ADJACENT SAID JUNCTION.
Claim 2
Dependent Claim
122 words
A SNAPP-OFF, COMPRISING: A BODY OF SINGLE CRYSTALLINE SEMICONDUCTOR MATERIAL CONTAINING DONOR AND ACCEPTOR CURRENT CARRIER DOPING IMPUIRTIES WHICH FORM A PN JUNCTION IN SAID BODY; AND A QUNATITY OF A RECOMBINATION IMPURITY LOCATED WITHIN SAID BODY ON BOTH SIDES OF SAID JUNCTION, AND HAVING A GRADUATED CONCENTRATION WHICH DECREASES AS SAID JUNCTION IS APPROACHED, SAID RECOMBINATION IMPURITY BEING A MATERIAL WHICH REDUCES THE LIFETIME OF THE CURRENT CARRIERS IN SAID BODY BY INTRODUCING RECOMBINATION TRAPS WHICH HAVE ENERGY LEVELS BETWEEN THE DONOR AND ACCEPTOR ENERGY LEVELS OF THE IMPURITY DOPED SEMICONDUCTOR MATERIAL OF SAID BODY IN ORDER TO REDUCE MINORITY CARRIER CHARGE STORAGE IN AREAS REMOTE FROM SAID JUNCTION WHILE MAINTAINING A SUBSTANTIAL AMOUNT OF SAID CHARGE STORAGE ADJACENT SAID JUNCTION.
References Cited (Backward Citations)
US2631356A
Cited
US2680220A
Cited
US2705767A
Cited
US2935781A
Cited
US2964689A
Cited
US3067485A
Cited
US3184347A
Cited
US3056100A
Cited
US3147152A
Cited
US3152024A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1970-08-21 | 1971-02-20 | 1971-08-22 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1974-08-21 | 1975-02-20 | 1975-08-22 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1978-08-21 | 1979-02-20 | 1979-08-22 | $7700.00 | Window Closed / Lapsed |