US3419764A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Negative resistance semiconductor devices
Assignee: Individual
•
Filing: 1966-12-12
•
Granted: 1968-12-31
•
Expires: 1986-12-12
Abstract
No abstract record available.
Inventors
- 👤 Kasugai Takahiko
- 👤 Nojima Susumu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 21:07
CPC Classifications
H; H10; H10D; H10D99/00; H10D1/00; H10D1/40; H10P; H10P95/00
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
145 words
A NEGATIVE RESISTANCE SEMICONDUCTOR DIODE COMPRISING A HIGH DOPED P+ TYPE SEMICONDUCTOR REGION, A HIGH DOPED N+ TYPE SEMICONDUCTOR REGION, AND AN INTERMEDIATE REGION INTERPOSED BETWEEN SAID P+ TYPE AND N+ TYPE REGIONS AND DOPED WITH PREDETERMINED METAL IMPURITIES OF GROUPS III AND V IN THE PERIODIC TABLE TO HAVE A PREDETERMINED CONDUCTIVE TYPE, SAID INTERMEDIATE REGION BEING FURTHER DOPED WITH DEEP LEVEL IMPURITIES OTHER THAN THE GROUPS III AND V DOPING ELEMENTS IN SUCH A MANNER THAT THE GRADIENT OF CONCENTRATION OF SAID DEEP LEVEL IMPURITIES DECREASES FROM THE SELECTED INTERJUNCTION BETWEEN SAID INTERMEDIATE REGION AND SAID SELECTED HIGH DOPED TYPE SEMICONDUCTOR REGION TOWARD THE CENTRAL PORTION OF SAID INTERMEDIATE REGION, AND THE CONCENTRATION OF SAID DEEP LEVEL IMPURITIES BEING GREATER THAN THE CONCENTRATION OF SAID METAL IMPURITIES OF GROUPS III AND V AT A PORTION OF SAID INTERMEDIATE REGION ADJACENT SAID SELECTED INTERJUNCTION.
Claim 2
Dependent Claim
145 words
A NEGATIVE RESISTANCE SEMICONDUCTOR DIODE COMPRISING A HIGH DOPED P+ TYPE SEMICONDUCTOR REGION, A HIGH DOPED N+ TYPE SEMICONDUCTOR REGION, AND AN INTERMEDIATE REGION INTERPOSED BETWEEN SAID P+ TYPE AND N+ TYPE REGIONS AND DOPED WITH PREDETERMINED METAL IMPURITIES OF GROUPS III AND V IN THE PERIODIC TABLE TO HAVE A PREDETERMINED CONDUCTIVE TYPE, SAID INTERMEDIATE REGION BEING FURTHER DOPED WITH DEEP LEVEL IMPURITIES OTHER THAN THE GROUPS III AND V DOPING ELEMENTS IN SUCH A MANNER THAT THE GRADIENT OF CONCENTRATION OF SAID DEEP LEVEL IMPURITIES DECREASES FROM THE SELECTED INTERJUNCTION BETWEEN SAID INTERMEDIATE REGION AND SAID SELECTED HIGH DOPED TYPE SEMICONDUCTOR REGION TOWARD THE CENTRAL PORTION OF SAID INTERMEDIATE REGION, AND THE CONCENTRATION OF SAID DEEP LEVEL IMPURITIES BEING GREATER THAN THE CONCENTRATION OF SAID METAL IMPURITIES OF GROUPS III AND V AT A PORTION OF SAID INTERMEDIATE REGION ADJACENT SAID SELECTED INTERJUNCTION.
References Cited (Backward Citations)
US3337779A
Cited
US3244566A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1971-12-31 | 1972-07-01 | 1972-12-31 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1975-12-31 | 1976-07-01 | 1976-12-31 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1979-12-31 | 1980-07-01 | 1980-12-31 | $7700.00 | Window Closed / Lapsed |