Patent US3417464A successfully refreshed from Google Patents.
US3417464A
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Method for fabricating insulated-gate field-effect transistors
Assignee: International Business Machines Corp
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Filing: 1965-05-21
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Granted: 1968-12-24
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Expires: 1985-05-21
Abstract
No abstract record available.
Inventors
- 👤 Frank F Fang
- 👤 Edward J Walker
- 👤 Hwa N Yu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 22:30
CPC Classifications
H; H10; H10P; H10P95/00; H10D; H10D84/00; H10D84/01; H10D84/0123; H10D84/0126; H10D84/0163; H10D84/02; H10D84/03; H10D84/038; H10D99/00; H10P14/00; H10P14/60; H10P14/63; H10P14/6302; H10P14/6304; H10P14/6306; H10P14/6308; H10P14/6309; H10P14/6322; Y; Y10; Y10S; Y10S438/00; Y10S438/914; Y10S438/923
Claims Analysis
Total Claims: 0
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References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1971-12-24 | 1972-06-24 | 1972-12-24 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1975-12-24 | 1976-06-24 | 1976-12-24 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1979-12-24 | 1980-06-24 | 1980-12-24 | $7700.00 | Window Closed / Lapsed |