Method of vapor depositing superconductive film for cryogenic devices

Claim 1

A CRYOGENIC DEVICE COMPRISING A SINGLE ELECTRICALLYINSULATING SUBSTRATE PORTION, ON THE SIAD SUBSTARTE PORTION A THIN STRIATED DISCONTINUOUS VAPOR-DEPOSITED SUPERCONDUCTIVE FILM COMPOSED OF TWO-DIMENSIONALLY EXTENDED ARRAY OF DISCRETE ELONGATED SUPERCONDUCTIVE REGIONS IN WHICH THE DISTANCE BETWEEN THE DISCRETE SUPERCONDUCTIVE REGIONS IN A GIVEN DIRECTION IS SMALL ENOUGH TO PERMIT TUNNELING OF ELECTRNS BETWEEN THE REGIONS IN SAID GIVEN DIRECTION, AND IN WHICH THE DISTANCE BETWEEN DISCRETE SUPERCONDUCTIVE REGIONS IN A DIRECTION AT RIGHT ANGLES TO THE GIVEN DIRECTION IS GENERALLY GREATER THAN SAID DISTANCE BETWEEN SAID REGIONS IN THE GIVEN DIRECTION AND LARGE ENOUGH TO PREVENT TUNNELING OF ELECTRONS BETWEEN THE REGIONS IN SAID RIGHT ANGLE DIRECTION, SAID DISCRETE SUPERCONDUCTIVE REGIONS HAVING A LENGTH IN THE GIVEN DIRECTION WHICH EXCEEDS THEIR WIDTH IN THE RIGHT ANGLE DIRECTION, FIRST MEANS ON THE SAID SUBSTRATE FOR ELECTRICALLY CONTACTING IN COMMON PLURAL DISCRETE REGIONS OF SAID FILM EXTENDING IN THE SAID RIGHT ANGLE DIRECTION, AND SECOND MEANS ON THE SAID SUBSTRATE FOR ELECTRICALLY CONTACTING IN COMMON PLURAL DISCRETE REGIONS OF SAID FILM EXTENDING IN THE SAID RIGHT ANGLE DIRECTION WHICH ARE SPACED APART IN THE GIVEN DIRECTION FROM THE PLURAL REGIONS CONTACTED BY THE FIRST MEANS.