Patent US2444761A successfully refreshed from Google Patents.
Patent US3393103A successfully refreshed from Google Patents.
US3393103A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of polishing gallium arsenide single crystals by reaction with a gaseous atmosphere incompletely saturated with gallium
Assignee: International Business Machines Corp
•
Filing: 1965-07-12
•
Granted: 1968-07-16
•
Expires: 1985-07-12
Abstract
No abstract record available.
Inventors
- 👤 Hellbardt Gunter
- 👤 Michelitsch Michael
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 12:56
CPC Classifications
H; H10; H10P; H10P70/00; H10P70/10; H10P70/12; C; C23; C23F; C23F3/00; C23F3/04; C23F3/06; H10P50/00; H10P50/20; H10P50/24; H10P50/246; H10P90/00; H10P90/12; H10P90/126; Y; Y10; Y10S; Y10S148/00; Y10S148/051
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
131 words
A METHOD OF POLISHING GALLIUM ARSENIDE SINGLE CRYSTALS COMPRISING THE STEPS OF: INTRODUCING SUITABLY PREPARED WAFERS OF SINGE CRYSTAL GALLIUM ARSENIDE INTO POLISHING APPARATUS, REACTING GASEOUS HYDROGEN AND A HYDROGEN HALIDE AT PREDETERMINED FLOW RATES WITH LIQUID GALLIUM HAVING A PREDETERMINED RANGE OF SURFACE AREAS OVER A TEMPERATURE RANGE SUFFICIENT TO PRODUCE A VAPOR OF SAID HYDROGEN AND SAID HYDROGEN HALIDE INCOMPLETELY SATURATED WITH GALLIUM FLOWING GASEOUS HYDROGEN AT A GIVEN FLOW RATE OVER ARSENIC OVER A TEMPERATURE RANGE SUFFICIENT TO PRODUCE A VAPOR OF SAID ARSENIC AND SAID HYDROGEN, MIXING SAID VAPOR INCOMPLETELY SATURATED WITH GALLIUM AND SAID VAPOR OF ARSENIC AND HYDROGEN, REACTING SAID MIXED VAPORS WITH SAID GALLIUM ARSENIDE CRYSTALS OVER A PREDETERMINED RANGE OF TEMPERATURES TO CAUSE FINE POLISHING OF A SURFACE OF SAID GALLIUM ARSENIDE WAFERS.
Claim 2
Dependent Claim
62 words
A METHOD OF POLISHING GALLIUM ARSENIDE SINGLE CRYSTALS AS IN CLAIM 2 FURTHER INCLUDING THE STEP OF INCREASING THE PREDETERMINED SURFACE AREA OF SAID LIQUID GALLIUM TO A SURFACE AREA GREATER THAN SAID PREDETERMINED RANGE OF SURFACE AREAS SO THAT EPITAXIAL DEPOSITION OF GALLIUM ARSENIDE OCCURS ON SAID CRYSTALS DUE TO SUPERSATURATION OF SAID HYDROGEN AND SAID HYDROGEN HALIDE VAPOR WITH GALLIUM.
References Cited (Backward Citations)
US3224911A
Cited
US3312570A
Cited
US3173802A
Cited
US3243323A
Cited
US3218205A
Cited
US3310425A
Cited
US3345222A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1971-07-16 | 1972-01-15 | 1972-07-16 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1975-07-16 | 1976-01-15 | 1976-07-16 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1979-07-16 | 1980-01-15 | 1980-07-16 | $7700.00 | Window Closed / Lapsed |