Patent US3377216A successfully refreshed from Google Patents.
US3377216A
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Method for indiffusion of foreign material into a monocrystalline semiconductor member
Assignee: Siemens AG
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Filing: 1965-06-21
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Granted: 1968-04-09
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Expires: 1985-06-21
Abstract
No abstract record available.
Inventors
- 👤 Raithel Kurt
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 23:17
CPC Classifications
H; H10; H10P; H10P32/00; H10P32/10; H10P32/12; C; C09; C09K; C09K8/00; C09K8/02; C09K8/04; C09K8/26; C09K8/28; C30; C30B; C30B31/00; C30B31/06; C30B31/10; C30B31/18; H10P32/17; H10P32/171; Y; Y10; Y10S; Y10S252/00; Y10S252/95; Y10S252/951
Claims Analysis
Total Claims: 0
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References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1971-04-09 | 1971-10-09 | 1972-04-09 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1975-04-09 | 1975-10-09 | 1976-04-09 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1979-04-09 | 1979-10-09 | 1980-04-09 | $7700.00 | Window Closed / Lapsed |