Method for producing a p-n junction in a monocrystalline semiconductor member by etching and diffusion

Claim 1

THE METHOD FOR PRODUCING A P-N JUNCTION IN A MONOCRYSTALLINE SEMICONDUCTOR MEMBER, WHICH COMPRISES PLACING UPON THE SURFACE JOF A SEMICONDUCTOR OF A GIVEN CONDUCTANCE TYPE, A DOPANT MATERIAL OF OPPOSITE CONDUCTANCE TYPE, ETCHING THE DOPANT FORM AREAS NOT TO BE DOPED, DIFFUSING THE REMAINING DOPANT INTO THE SEMICONDUCTOR BODY; PRECIPITATING A MONOCRYSTALLINE SILICON LAYER OF FROM 5 TO 10 UM THICK UPON THE MONOCRYSTALLINE SUBSTRATE AT A TEMPERATURE FROM 1050* TO 1150*C. BY PYROLYTIC DISSOCIATION OF A GASEOUS SEMICONDUCTOR COMPOUND AT THE SURFACE OF THE HEATED SUBSTRATE; AND AFTER TERMINATION OF THE GROWING PROCESS TEMPERING THE RESULTING SEMICONDUCTOR BODY AT 1100*C. FOR ABOUT 75 MINUTES WHEREBY ONLY ONE DOPANT DIFFUSED FROM THE SUBSTRATE INTO THE GROWN LAYER PRODUCES THE DESIRED TYPE OF CONDUCTANCE AT THE LAYER SIDE FACING AWAY FROM THE SUBSTRATE, WHEREAS THE OTHER DOPANT HAS VIRTUALLY NOT YET REACHED A LARGE PORTION OF THE GROWN LAYER.

Claim 2

THE METHOD FOR PRODUCING A P-N JUNCTION IN A MONOCRYSTALLINE SEMICONDUCTOR MEMBER, WHICH COMPRISES PLACING UPON THE SURFACE JOF A SEMICONDUCTOR OF A GIVEN CONDUCTANCE TYPE, A DOPANT MATERIAL OF OPPOSITE CONDUCTANCE TYPE, ETCHING THE DOPANT FORM AREAS NOT TO BE DOPED, DIFFUSING THE REMAINING DOPANT INTO THE SEMICONDUCTOR BODY; PRECIPITATING A MONOCRYSTALLINE SILICON LAYER OF FROM 5 TO 10 UM THICK UPON THE MONOCRYSTALLINE SUBSTRATE AT A TEMPERATURE FROM 1050* TO 1150*C. BY PYROLYTIC DISSOCIATION OF A GASEOUS SEMICONDUCTOR COMPOUND AT THE SURFACE OF THE HEATED SUBSTRATE; AND AFTER TERMINATION OF THE GROWING PROCESS TEMPERING THE RESULTING SEMICONDUCTOR BODY AT 1100*C. FOR ABOUT 75 MINUTES WHEREBY ONLY ONE DOPANT DIFFUSED FROM THE SUBSTRATE INTO THE GROWN LAYER PRODUCES THE DESIRED TYPE OF CONDUCTANCE AT THE LAYER SIDE FACING AWAY FROM THE SUBSTRATE, WHEREAS THE OTHER DOPANT HAS VIRTUALLY NOT YET REACHED A LARGE PORTION OF THE GROWN LAYER.