Patent US3351825A successfully refreshed from Google Patents.
US3351825A
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US
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Semiconductor device having an anodized protective film thereon and method of manufacturing same
Assignee: Solitron Devices Inc
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Filing: 1964-12-21
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Granted: 1967-11-07
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Expires: 1984-12-21
Abstract
No abstract record available.
Inventors
- 👤 Robert O Vidas
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 17:57
CPC Classifications
H; H10; H10W; H10W74/00; H10W74/40; H10W74/43; H10D; H10D99/00; H10W72/00; H10W72/90; H10W72/01; H10W72/015; H10W72/01515; H10W72/071; H10W72/075; H10W72/50; H10W72/531; H10W72/536; H10W72/59; Y; Y10; Y10S; Y10S148/00; Y10S148/02; Y10S148/043; Y10S148/106; Y10S148/118
Claims Analysis
Total Claims: 1
Claim 1
Independent Claim
65 words
A SEMICONDUCTOR DEVICE COMPRISING A BODY OF SILICON OF A FIRST CONDUCTIVITY TYPE HAVING AT LEAST ONE REGION OF OPPOSITE CONDUCTIVITY TYPE DIFFUSED INTO AND BENEATH A FIRST SURFACE THEREOF DEFINING A PN JUNCTION EXTENDING TO THE SURFACE THEREOF, ELECTRODES IN OHMIC CONTACT TO SAID BODY AND SAID REGIONS, A LAYER OF ANODICALLY GROWN SILICON OXIDE COVERING AT LEAST THE REGION OF SAID SURFACE WHERE
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1970-11-06 | 1971-05-08 | 1971-11-07 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1974-11-06 | 1975-05-08 | 1975-11-07 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1978-11-06 | 1979-05-08 | 1979-11-07 | $7700.00 | Window Closed / Lapsed |