Patent US5139494A successfully refreshed from Google Patents.
US3010885A
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Method for electrolytically etching and thereafter anodically oxidizing an essentially monocrystalline semiconductor body having a p-n junction
Assignee: Siemens Schuckertwerke AG
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Filing: 1957-06-11
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Granted: 1961-11-28
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Expires: 1977-06-11
Abstract
No abstract record available.
Inventors
- 👤 Schink Norbert
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 22:36
CPC Classifications
H; H10; H10P; H10P95/00; C; C25; C25D; C25D11/00; C25D11/02; C25D11/32; C25F; C25F3/00; C25F3/02; C25F3/12; C25F3/16; C25F3/30; C25F7/00; H10P14/00; H10P14/40; H10P14/46; H10P14/47; H10P50/00; H10P50/60; H10P50/61; H10P50/613; H10W; H10W74/00; H10W74/40; H10W74/43
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
120 words
THE METHOD OF TREATING A SUBSTANTIALLY MONOCRYSTALLINE SEMICONDUCTOR DEVICE HAVING A P-N JUNCTION AND HAVING A SURFACE AT WHICH SAID P-N JUNCTION EMERGES, WHICH COMPRISES ANODICALLY ETCHING AWAY MATERIAL FROM SAID SURFACE IN AN ELECROLYTIC BATH, TO ELIMINATE A SHORT CIRCUIT, MAINTAINING SAID SURFACE DURING AT LEAST THE LAST STATE OF ETCHING AT A POLARIZING ELECTRIC POTENTIAL BELOW THE CRITICAL RANGE REQUIRED FOR ELECTROLYTIC POLISHING OF SAID SURFACE, SAID POLARIZING ELECTRIC POTENTIAL BEING SUFFICIENTLY LOW TO CAUSE SAID SURFACE TO SCINTILLATE N INTERFERENCE COLORS AND TO BE WETTED BY WATER, AND THEREAFTER, IN A SEPARATE STEP, SUBJECTING SAID SURFACE TO ANODIC OXIDATION, IN A AQUEOUS ACID HAVING A DISSOCIATION CONSTANT BETWEEN ABOUT 10-6 AND 10-11, TO PROVIDE A PROTECTIVE COATING.
Claim 2
Independent Claim
120 words
THE METHOD OF TREATING A SUBSTANTIALLY MONOCRYSTALLINE SEMICONDUCTOR DEVICE HAVING A P-N JUNCTION AND HAVING A SURFACE AT WHICH SAID P-N JUNCTION EMERGES, WHICH COMPRISES ANODICALLY ETCHING AWAY MATERIAL FROM SAID SURFACE IN AN ELECROLYTIC BATH, TO ELIMINATE A SHORT CIRCUIT, MAINTAINING SAID SURFACE DURING AT LEAST THE LAST STATE OF ETCHING AT A POLARIZING ELECTRIC POTENTIAL BELOW THE CRITICAL RANGE REQUIRED FOR ELECTROLYTIC POLISHING OF SAID SURFACE, SAID POLARIZING ELECTRIC POTENTIAL BEING SUFFICIENTLY LOW TO CAUSE SAID SURFACE TO SCINTILLATE N INTERFERENCE COLORS AND TO BE WETTED BY WATER, AND THEREAFTER, IN A SEPARATE STEP, SUBJECTING SAID SURFACE TO ANODIC OXIDATION, IN A AQUEOUS ACID HAVING A DISSOCIATION CONSTANT BETWEEN ABOUT 10-6 AND 10-11, TO PROVIDE A PROTECTIVE COATING.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1964-11-27 | 1965-05-29 | 1965-11-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1968-11-27 | 1969-05-29 | 1969-11-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1972-11-27 | 1973-05-29 | 1973-11-28 | $7700.00 | Window Closed / Lapsed |