US3349476A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Formation of large area contacts to semiconductor devices
Assignee: International Business Machines Corp
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Filing: 1963-11-26
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Granted: 1967-10-31
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Expires: 1983-11-26
Abstract
No abstract record available.
Inventors
- 👤 Manfred H Pilkuhn
- 👤 Hans S Rupprecht
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 00:05
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10H20/83; H10H20/831; H10P; H10P14/00; H10P14/40; H10P14/46; H10H20/01; H10H20/011; H10H20/013
Claims Analysis
Total Claims: 1
Claim 1
Independent Claim
118 words
A METHOD OF FORMING A LARGE AREA OHMIC CONTACT TO A DEVICE CONSTITUTED OF A SEMICONDUCTOR BODY WHEREIN A JUNCTION IS FORMED CAPABLE OF EMITTING LIGHT RADIATION COMPRISING THE STEPS OF: ELECTROLYTICALLY DEPOSITING A VERY THIN COATING, ON THE ORDER OF 5000 A. IN THICKNESS, OF GOLD ON ONE SURFACE OF P CONDUCTIVITY TYPE OF SAID SEMICONDUCTOR BODY; ELECTRODELESSLY DEPOSITING A NICKEL FILM OVER SAID FLASH COATING OF GOLD, THEREAFTER DEPOSITING A GOLD FILM HAVING A THICKNESS APPROXIMATELY TEN TIMES SAID GOLD FLASH COATING OVER SAID NICKEL FILM, AND AFFIXING AT LEAST ONE ELECTRICAL CONDUCTOR TO THE ONE SURFACE OF SAID SEMICONDUCTOR BODY HAVING SAID GOLD FLASH COATING, SAID NICKEL FILM AND SAID RELATIVELY THICK GOLD FILM THEREON.
References Cited (Backward Citations)
US2916806A
Cited
US3028663A
Cited
US3046176A
Cited
US3253320A
Cited
US2995473A
Cited
US3169304A
Cited
US3187403A
Cited
US3245002A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1970-10-30 | 1971-05-01 | 1971-10-31 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1974-10-30 | 1975-05-01 | 1975-10-31 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1978-10-30 | 1979-05-01 | 1979-10-31 | $7700.00 | Window Closed / Lapsed |