Patent US3341360A successfully refreshed from Google Patents.
US3341360A
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Method of precipitating crystalline layers of highly pure, brittle materials
Assignee: Siemens and Halske AG
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Filing: 1963-08-19
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Granted: 1967-09-12
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Expires: 1983-08-19
Abstract
No abstract record available.
Inventors
- 👤 Nickl Julius
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 21:41
CPC Classifications
C; C30; C30B; C30B29/00; C30B29/10; C30B29/40; C23; C23C; C23C14/00; C23C14/22; C23C14/24; C30B23/00; C30B23/02; H; H10; H10P; H10P95/00; Y; Y10; Y10S; Y10S148/00; Y10S148/065; Y10S148/104; Y10S148/169; Y10S438/00; Y10S438/935
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
108 words
THE METHOD OF PRECIPITATING CRYSTALLINE, PARTICULARLY MONOCRYSTALLINE LAYERS OF HIGHLY PURE SEMICONDUCTOR MATERIAL AND OTHER BRITTLE MATERIALS, WHEREBY THE MATERIAL TO BE PRECIPITATED IS VAPORIZED IN A REACTION VESSEL AND PRECIPITATED ON A CARRIER OF SIMILAR LATTICE TYPE, LOCATED IN THE SAME VESSEL, WHICH COMPRISES DIRECTING THE MATERIAL TO BE PRECIPITATED IN THE FORM OF A VAPOR JET UPON THE CARRIER TO BE COATED, EXECUTING THE VAPORIZATION PROCESS BY MAINTAINING THE GAS PRESSURE IN THE PRECIPITATION VESSEL SUCH THAT THE FREE PATH LENGTH OF THE VAPOR PARTICLES LIES IN THE ORDER OF MAGNITUDE OF THE DISTANCE BETWEEN THE VAPOR SOURCE AND THE CARRIER AND ADDING GASEOUS HALIDE SUB-
Claim 2
Independent Claim
108 words
THE METHOD OF PRECIPITATING CRYSTALLINE, PARTICULARLY MONOCRYSTALLINE LAYERS OF HIGHLY PURE SEMICONDUCTOR MATERIAL AND OTHER BRITTLE MATERIALS, WHEREBY THE MATERIAL TO BE PRECIPITATED IS VAPORIZED IN A REACTION VESSEL AND PRECIPITATED ON A CARRIER OF SIMILAR LATTICE TYPE, LOCATED IN THE SAME VESSEL, WHICH COMPRISES DIRECTING THE MATERIAL TO BE PRECIPITATED IN THE FORM OF A VAPOR JET UPON THE CARRIER TO BE COATED, EXECUTING THE VAPORIZATION PROCESS BY MAINTAINING THE GAS PRESSURE IN THE PRECIPITATION VESSEL SUCH THAT THE FREE PATH LENGTH OF THE VAPOR PARTICLES LIES IN THE ORDER OF MAGNITUDE OF THE DISTANCE BETWEEN THE VAPOR SOURCE AND THE CARRIER AND ADDING GASEOUS HALIDE SUB-
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1970-09-11 | 1971-03-13 | 1971-09-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1974-09-11 | 1975-03-13 | 1975-09-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1978-09-11 | 1979-03-13 | 1979-09-12 | $7700.00 | Window Closed / Lapsed |