Patent US3327131A successfully refreshed from Google Patents.
US3327131A
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US
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Current control system
Assignee: International Business Machines Corp
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Filing: 1961-12-29
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Granted: 1967-06-20
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Expires: 1981-12-29
Abstract
No abstract record available.
Inventors
- 👤 Robert C Grimmer
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 17:08
CPC Classifications
G; G05; G05F; G05F3/00; G05F3/02; G05F3/08; G05F3/10; G05F3/16; G05F3/20; G05F3/22; G05F3/222; H; H03; H03K; H03K17/00; H03K17/14
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
150 words
A SEMICONDUCTOR CIRCUIT COMPRISING: A SEMICONDUCTOR HAVING A COLLECTOR ELEMENT, A BASE ELEMENT AND AN EMITTER ELEMENT, SAID SEMICONDUCTOR BEING BIASED FOR OPERATION AS A SWITCHING DEVICE CHARACTERIZED BY A NONCONDUCTING CONDITION AND A CONDUCTING CONDITION; A BACKWARD DIODE CONNECTED IN PARALLEL WITH THE JUNCTION BETWEEN THE BASE AND EMITTER ELEMENTS TO PASS THERETHROUGH A CONSTANT CURRENT OVER A RANGE OF VOLTAGE LEVELS THEREACROSS AT LEAST INCLUDING THE RANGE OF THE BASE EMITTER JUNCTION VOLTAGE OF SAID SEMICONDUCTOR DURING BOTH ITS NONCONDUCTING AND CONDUCTING STATES, SAID BACKWARD DIODE BING SELECTED TO HAVE A CONSTANT CURRENT LEVEL TO INCLUDE THE MAXIMUM COLLECTOR LEAKAGE CURRENT PASSING THROUGH THE COLLECTOR BASE JUNCTION OF SAID SEMICONDUCTOR DURING A SELECTED TEMPERATURE RANGE OF OPERATION, SAID CONSTANT CURRENT AND SAID RANGE OF VOLTAGE LEVELS BEING EQUAL TO THE CONSTANT CURRENT AND RELATED RANGE OF VOLTAGES OF THE STATIC CHARACTERISTIC CURVE OF THE SELECTED SAID BACKWARD DIODE.
Claim 2
Dependent Claim
150 words
A SEMICONDUCTOR CIRCUIT COMPRISING: A SEMICONDUCTOR HAVING A COLLECTOR ELEMENT, A BASE ELEMENT AND AN EMITTER ELEMENT, SAID SEMICONDUCTOR BEING BIASED FOR OPERATION AS A SWITCHING DEVICE CHARACTERIZED BY A NONCONDUCTING CONDITION AND A CONDUCTING CONDITION; A BACKWARD DIODE CONNECTED IN PARALLEL WITH THE JUNCTION BETWEEN THE BASE AND EMITTER ELEMENTS TO PASS THERETHROUGH A CONSTANT CURRENT OVER A RANGE OF VOLTAGE LEVELS THEREACROSS AT LEAST INCLUDING THE RANGE OF THE BASE EMITTER JUNCTION VOLTAGE OF SAID SEMICONDUCTOR DURING BOTH ITS NONCONDUCTING AND CONDUCTING STATES, SAID BACKWARD DIODE BING SELECTED TO HAVE A CONSTANT CURRENT LEVEL TO INCLUDE THE MAXIMUM COLLECTOR LEAKAGE CURRENT PASSING THROUGH THE COLLECTOR BASE JUNCTION OF SAID SEMICONDUCTOR DURING A SELECTED TEMPERATURE RANGE OF OPERATION, SAID CONSTANT CURRENT AND SAID RANGE OF VOLTAGE LEVELS BEING EQUAL TO THE CONSTANT CURRENT AND RELATED RANGE OF VOLTAGES OF THE STATIC CHARACTERISTIC CURVE OF THE SELECTED SAID BACKWARD DIODE.
References Cited (Backward Citations)
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1970-06-19 | 1970-12-19 | 1971-06-20 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1974-06-19 | 1974-12-19 | 1975-06-20 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1978-06-19 | 1978-12-19 | 1979-06-20 | $7700.00 | Window Closed / Lapsed |