Patent US3308356A successfully refreshed from Google Patents.
US3308356A
Expired / Lapsed
US
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Silicon carbide semiconductor device
Assignee: International Business Machines Corp
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Filing: 1964-06-30
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Granted: 1967-03-07
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Expires: 1984-06-30
Abstract
No abstract record available.
Inventors
- 👤 Richard F Rutz
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 11:50
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/80; H10D62/83; H10D62/832; H10D62/8325; H10P; H10P10/00; H10P10/12; Y; Y10; Y10S; Y10S148/00; Y10S148/107; Y10S148/148; Y10S438/00; Y10S438/931
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
67 words
A SEMICONDUCTOR CONNECTION COMPRISING A BODY OF P CONDUCTIVITY TYPE CRYSTALLINE SILICON CARBIDE CONTAINING A P-N JUNCTION BETWEEN A P TYPE REGION OF SAID CRYSTALLINE SILICON CARBIDE AND AN N CONDUCTIVITY TYPE REGION IN SAID BODY, SAID LATTER REGION BEING FUSED INTO SAID BODY AND CONTAINING A DISSOLVED GAS AS AN N CONDUCTIVITY TYPE DETERMINING IMPURITY, SAID N TYPE REGION BEING DEGENERATELY DOPED BY SAID DISSOLVED GAS.
Claim 2
Dependent Claim
67 words
A SEMICONDUCTOR CONNECTION COMPRISING A BODY OF P CONDUCTIVITY TYPE CRYSTALLINE SILICON CARBIDE CONTAINING A P-N JUNCTION BETWEEN A P TYPE REGION OF SAID CRYSTALLINE SILICON CARBIDE AND AN N CONDUCTIVITY TYPE REGION IN SAID BODY, SAID LATTER REGION BEING FUSED INTO SAID BODY AND CONTAINING A DISSOLVED GAS AS AN N CONDUCTIVITY TYPE DETERMINING IMPURITY, SAID N TYPE REGION BEING DEGENERATELY DOPED BY SAID DISSOLVED GAS.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1970-03-06 | 1970-09-05 | 1971-03-07 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1974-03-06 | 1974-09-05 | 1975-03-07 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1978-03-06 | 1978-09-05 | 1979-03-07 | $7700.00 | Window Closed / Lapsed |