Method of forming diode with high resistance substrate

Claim 1

THE METHOD OF MANUFACTURING A DIFFUSED JUNCTION SEMICONDUCTOR DIODE FROM A UNITARY SILICON STARTING CRYSTAL WAFER HAVING A RESISTIVTY IN EXCESS OF TWO OHM-CENTIMETERS, INCLUDING THE STEPS OF: (A) DIFFUSING ATOMS OF A CONDUCTIVITY DETERMINING TYPE ACTIVE IMPURITY INTO A PREDETERMINED SURFACE OF SAID STARTING CRYSTAL WAFER TO ESTABLISH A FIRST SURFACE REGION OF ONE CONDUCTIVITY TYPE THEREIN, THE RESISTIVITY OF SAID FIRST SURFACE REGION BEING LESS THAN 2 OHMCENTIMETERS; (B) DIFFUSING ATOMS OF ANOTHER CONDUCTIVITY DETERMINING TYPE ACTIVE IMPURTIY INTO A PORTION OF SAID PREDETERMINED SURFACE OF SAID STARTING WAFER TO ESTABLISH A SECOND SURFACE REGION OF THE OPPOSIT CONDUCTIVITY TYPE FROM SAID FIRST SURFACE REGION AND EXTENDING THROUGH SAID FIRST SURFACE REGION TO FORM A RECTIFYING JUNCTION OF TUBLAR CONFIGURATION THEREBETWEEN, THE RESISTIVITY OF SAID SECOND SURFACE REGION BEING LESS THAN TWO OHM-CENTIMERERS; (C) GOLD DOPING SAID STARTING CRYSTAL WAFER TO INCREASE THE RESISTIVITY OF THAT PORTION OF THE WAFER HAVING A RESISTIVITY IN EXCESS OF TWO OHM-CENTIMETERS TO A VALUE IN EXCESS OF 100 TIMES THE RESISTIVITY OF SAID FIRST AND SECOND SURFACE REGIONS AND TO REDUCE ITS LIFETIME TO A VALUE NOT IN EXCESS OF 0.1 MICROSECOND; (D) ESTABLISHING LOW RESISTANCE OHMIC CONTACT TO SAID FIRST SURFACE REGION; AND, (E) ESTABLISHING LOW RESISTANCE OHMIC CONTACT TO SAID SECOND SURFACE REGION.

Claim 2

THE METHOD OF MANUFACTURING A DIFFUSED JUNCTION SEMICONDUCTOR DIODE FROM A UNITARY SILICON STARTING CRYSTAL WAFER HAVING A RESISTIVTY IN EXCESS OF TWO OHM-CENTIMETERS, INCLUDING THE STEPS OF: (A) DIFFUSING ATOMS OF A CONDUCTIVITY DETERMINING TYPE ACTIVE IMPURITY INTO A PREDETERMINED SURFACE OF SAID STARTING CRYSTAL WAFER TO ESTABLISH A FIRST SURFACE REGION OF ONE CONDUCTIVITY TYPE THEREIN, THE RESISTIVITY OF SAID FIRST SURFACE REGION BEING LESS THAN 2 OHMCENTIMETERS; (B) DIFFUSING ATOMS OF ANOTHER CONDUCTIVITY DETERMINING TYPE ACTIVE IMPURTIY INTO A PORTION OF SAID PREDETERMINED SURFACE OF SAID STARTING WAFER TO ESTABLISH A SECOND SURFACE REGION OF THE OPPOSIT CONDUCTIVITY TYPE FROM SAID FIRST SURFACE REGION AND EXTENDING THROUGH SAID FIRST SURFACE REGION TO FORM A RECTIFYING JUNCTION OF TUBLAR CONFIGURATION THEREBETWEEN, THE RESISTIVITY OF SAID SECOND SURFACE REGION BEING LESS THAN TWO OHM-CENTIMERERS; (C) GOLD DOPING SAID STARTING CRYSTAL WAFER TO INCREASE THE RESISTIVITY OF THAT PORTION OF THE WAFER HAVING A RESISTIVITY IN EXCESS OF TWO OHM-CENTIMETERS TO A VALUE IN EXCESS OF 100 TIMES THE RESISTIVITY OF SAID FIRST AND SECOND SURFACE REGIONS AND TO REDUCE ITS LIFETIME TO A VALUE NOT IN EXCESS OF 0.1 MICROSECOND; (D) ESTABLISHING LOW RESISTANCE OHMIC CONTACT TO SAID FIRST SURFACE REGION; AND, (E) ESTABLISHING LOW RESISTANCE OHMIC CONTACT TO SAID SECOND SURFACE REGION.