Patent US3304470A successfully refreshed from Google Patents.
US3304470A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Negative resistance semiconductor device utilizing tunnel effect
Assignee: NEC Corp
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Filing: 1964-03-03
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Granted: 1967-02-14
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Expires: 1984-03-03
Abstract
No abstract record available.
Inventors
- 👤 Hayashi Teruo
- 👤 Watanabe Hisashi
- 👤 Sotome Yoshihiro
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 17:14
CPC Classifications
H; H10; H10D; H10D10/00; H10D48/00; H10D48/30; H10D48/32; H10D8/00; H10D8/70; H10D99/00
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
148 words
A SEMICONDUCTOR DEVICE HAVING A NEGATIVE RESISTANCE CHARACTERISTIC AND COMPRISING SEMICONDUCTOR REGIONS OF GIVEN TYPE CONDUCTIVITY SPACED FROM ONE ANOTHER, ONE OF SAID REGIONS BEING A DEGENERATE REGION WITH A HIGH IMPURITY CONCENTRATION, A SEMICONDUCTOR LAYER OF OPPOSITE TYPE CONDUCTIVITY SANDWICHED BETWEEN SAID REGIONS OF GIVEN TYPE CONDUCTIVITY, A DEGENERATE REGION WITH A HIGH IMPURITY CONCENTRATION OF THE SAME TYPE CONDUCTIVITY AS SAID OPPOSITE TYPE, SAID LATTER REGION BEING FORMED CONTIGUOUS TO SAID LAYER AND SAID REGIONS OF GIVEN TYPE CONDUCTIVITY, A TUNNEL JUNCTION FORMED AT THE JUNCTURE OF SAID REGIONS OF HIGH IMPURITY CONCENTRATION, TERMINALS ATTACHED TO EACH OF SAID REGIONS, WHEREBY SAID NEGATIVE RESISTANCE CHARACTERISTIC IS OBTAINED BETWEEN SAID TERMINALS CONNECTED TO SAID REGIONS OF GIVEN TYPE CONDUCTIVITY, SAID NEGATIVE RESISTANCE BEING CONTROLLABLE BY THE VOLTAGE-CURRENT CHARACTERISITIC OF THE TUNNEL DIODE FORMED BY SAID REGIONS OF HIGH IMPURITY CONCENTRATION AND SAID TUNNEL JUNCTION BETWEEN THESE REGIONS.
Claim 2
Dependent Claim
148 words
A SEMICONDUCTOR DEVICE HAVING A NEGATIVE RESISTANCE CHARACTERISTIC AND COMPRISING SEMICONDUCTOR REGIONS OF GIVEN TYPE CONDUCTIVITY SPACED FROM ONE ANOTHER, ONE OF SAID REGIONS BEING A DEGENERATE REGION WITH A HIGH IMPURITY CONCENTRATION, A SEMICONDUCTOR LAYER OF OPPOSITE TYPE CONDUCTIVITY SANDWICHED BETWEEN SAID REGIONS OF GIVEN TYPE CONDUCTIVITY, A DEGENERATE REGION WITH A HIGH IMPURITY CONCENTRATION OF THE SAME TYPE CONDUCTIVITY AS SAID OPPOSITE TYPE, SAID LATTER REGION BEING FORMED CONTIGUOUS TO SAID LAYER AND SAID REGIONS OF GIVEN TYPE CONDUCTIVITY, A TUNNEL JUNCTION FORMED AT THE JUNCTURE OF SAID REGIONS OF HIGH IMPURITY CONCENTRATION, TERMINALS ATTACHED TO EACH OF SAID REGIONS, WHEREBY SAID NEGATIVE RESISTANCE CHARACTERISTIC IS OBTAINED BETWEEN SAID TERMINALS CONNECTED TO SAID REGIONS OF GIVEN TYPE CONDUCTIVITY, SAID NEGATIVE RESISTANCE BEING CONTROLLABLE BY THE VOLTAGE-CURRENT CHARACTERISITIC OF THE TUNNEL DIODE FORMED BY SAID REGIONS OF HIGH IMPURITY CONCENTRATION AND SAID TUNNEL JUNCTION BETWEEN THESE REGIONS.
References Cited (Backward Citations)
US2666814A
Cited
US2915647A
Cited
US2792540A
Cited
US2962605A
Cited
US2971140A
Cited
US3079512A
Cited
US3175934A
Cited
US3219837A
Cited
GB909522A
Cited
US3171042A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1970-02-13 | 1970-08-15 | 1971-02-14 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1974-02-13 | 1974-08-15 | 1975-02-14 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1978-02-13 | 1978-08-15 | 1979-02-14 | $7700.00 | Window Closed / Lapsed |