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US3219837A Expired / Lapsed US ⏱️ 0.0 years remaining

Negative resistance transistors

Assignee: Sanyo Electric Co Ltd
•
Filing: 1961-02-23
•
Granted: 1965-11-23
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Expires: 1981-02-23
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Abstract

No abstract record available.

Inventors

  • 👤 Nakahara Osamu

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-03 16:15
CPC Classifications
H; H10; H10D; H10D99/00

Claims Analysis

Total Claims: 2
Claim 1
Independent Claim 140 words
A TRANSISTOR EXHIBITIG NEGATIVE RESISTANCE EFFECTES INDEPENDENT OF AVALANCHE MECHANISM AND ADAPTED TO BE ENEERGIZED BY A SOURCE, SADI TRANSISTOR COMPRISING AN EMITTER AND A COLLECTOR OF SEMI-CONDUCTIVE MATIERAL OF ONE CONDUCITVITY TYPE UPON THE OPPOSITE FACES RESPECTIVELY OF A BASE OF SEMI-CONDUCTIVE MATIERAL OF THE OPPOSITE CONDUCTIVITY TYPE, THE EFFECTIVE JUNCION AREA OF SAID EMITTER BEING SMALLER THAN THAT OF SAID COLLECTOR WHEREBY A SECTION OF SAI BASE IS EXTERNAL TO THE BASE REGION COMMON TO BOTH COLLECTOR AND EMITER, SAID EXTERNAL SECTION OF SAID BASE HAVING MEANS INCLUDING A PORTION MADE OF SEMICONDUCTIVE MATERIAL HAVING A RELATIVELY HIGH RESISTIVITY FOR CAUSING MODULATION OF BASE RESISTIVITY BY COLLECTOR VOLTAGE IN THE SATUREATION REGION TO A DEGREE SUFFICIENT TO PRODUCE IN THE REGION OF SATUREATION A DECREASING COLLECTOR CURRENT AS COLECTOR VLTAGE IS INCREASED WHEREBY A NEGATIVE RESISTANCE EFFECT OBTAINS.
Claim 2
Dependent Claim 140 words
A TRANSISTOR EXHIBITIG NEGATIVE RESISTANCE EFFECTES INDEPENDENT OF AVALANCHE MECHANISM AND ADAPTED TO BE ENEERGIZED BY A SOURCE, SADI TRANSISTOR COMPRISING AN EMITTER AND A COLLECTOR OF SEMI-CONDUCTIVE MATIERAL OF ONE CONDUCITVITY TYPE UPON THE OPPOSITE FACES RESPECTIVELY OF A BASE OF SEMI-CONDUCTIVE MATIERAL OF THE OPPOSITE CONDUCTIVITY TYPE, THE EFFECTIVE JUNCION AREA OF SAID EMITTER BEING SMALLER THAN THAT OF SAID COLLECTOR WHEREBY A SECTION OF SAI BASE IS EXTERNAL TO THE BASE REGION COMMON TO BOTH COLLECTOR AND EMITER, SAID EXTERNAL SECTION OF SAID BASE HAVING MEANS INCLUDING A PORTION MADE OF SEMICONDUCTIVE MATERIAL HAVING A RELATIVELY HIGH RESISTIVITY FOR CAUSING MODULATION OF BASE RESISTIVITY BY COLLECTOR VOLTAGE IN THE SATUREATION REGION TO A DEGREE SUFFICIENT TO PRODUCE IN THE REGION OF SATUREATION A DECREASING COLLECTOR CURRENT AS COLECTOR VLTAGE IS INCREASED WHEREBY A NEGATIVE RESISTANCE EFFECT OBTAINS.

References Cited (Backward Citations)

US2810870A Cited
US3091701A Cited
US2962605A Cited
US3054912A Cited
US2983854A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1968-11-22 1969-05-24 1969-11-23 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1972-11-22 1973-05-24 1973-11-23 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1976-11-22 1977-05-24 1977-11-23 $7700.00 Window Closed / Lapsed

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