High frequency response transistors

Claim 1

IN COMBINATION, A SEMICONDUCTIVE DEVICE HAVING AN EMITTER, A BASE, AND A COLLECTOR, SAID COLLECTOR HAVING A VOLTAGE SOURCE CONNECTED THERETO OF A MAGNITUDE ADAPTED TO PRODUCE A MULITPLICATION OF CURRENT CARRIERS ARRIVING AT IT FROM SAID EMITTER, BIASING MEANS CONNECTED BETWEEN SAID EMITTER AND SAID BASE, A SIGNAL SOURCE CONNECTED TO SAID EMITTER, AND AN OUPUT CIRCUIT CONNECTED TO SAID COLLECTOR, SAID DEVICE HAVING ITS EMITTER CONTACT POSITIONED SUBSTANTIALLY IN LINE WITH THE PATH OF A SUBSTANTIAL NUMBER OF SAID MULTIPLIED CARRIERS AS SAID MULTIPLIED CARRIERS TRAVEL TO A BASE CONTACT ATTACHED TO SAID BASE TEGION SO AS TO CAUSE SAID MULTIPLIED CARRIERS TO TRAVEL SUBSTANTIALLY PARALLEL AND IN OPPOSING DIRECTION TO CARRIERS INJECTED AT SAID EMITTER WHEREBY A SUBSTANTIAL DRIFT VELOCITY IS SUPERIMPOSED ON THE RANDOM DIFFUSION MOTION OF SAID INJECTED CARRIERS WHILE SAID INJECTED CARRIERS ARE TRAVERSING ACROSS SAID BASE REGION FROM SAID EMITTER TO SAID COLLECTOR REGION THEREBY ENABLING A HIGH FREQUENCY SIGNAL TO BE DERIVED FROM SAID OUTPUT CIRCUIT.