Intermetallic compound semiconductor devices

Claim 1

A TRANSISTOR COMPRISING A SEMICONDUCTOR SUBSTRATE CRYSTAL OF GERMANIUM HAVING A GIVEN TYPE CONDUCTIVITY, SAID SUBSTRATE FORMING A COLLECTOR ELECTRODE, A SEMICONDUCTOR INTERMETALLIC COMPOUND CRYSTAL LAYER OF GALLIUM ARSENIDE FORMED ON A SURFACE OF SAID SUBSTRATE AND ALSO BEING OF SAID GIVEN TYPE CONDUCTIVITY, A JUNCTION BETWEEN SAID SUBSTRATE AND SAID LAYER HAVING A LOW VALUE OF OHMIC RESISTANCE, COMPARED WITH THE RESISTANCE VALUES OF SAID CRYSTALS, A REGION OF OPPOSITE TYPE CONDUCTIVITY FORMED OF GALLIUM ARSENIDE AND ZINC ON SAID LAYER, SAID REGION COMPRISING A BASE ELECTRODE, A P-N JUNCTION BETWEEN SAID REGION AND SAID LAYER, A REGION OF GIVEN TYPE CONDUCTIVITY AND INCLUDING TIN FORMED ON SAID REGION OF OPPOSITE TYPE CONDUCTIVITY AND COMPRISING AN EMITTER ELECTRODE, AND MEANS FOR MAKING ELECTRICAL CONTACT WITH EACH OF SAID EMITTER, BASE AND COLLECTOR ELECTRODES WHEREBY SAID TRANSISTOR HAS IMPROVED HIGH FREQUENCY CHARACTERISTICS.