Patent US3289267A successfully refreshed from Google Patents.
US3289267A
Expired / Lapsed
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Method for producing a semiconductor with p-n junction
Assignee: Siemens and Halske AG
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Filing: 1964-09-22
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Granted: 1966-12-06
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Expires: 1984-09-22
Abstract
No abstract record available.
Inventors
- 👤 Ullrich Hans
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 22:36
CPC Classifications
H; H10; H10P; H10P95/00; H10D; H10D99/00; H10P76/00; H10P76/40; Y; Y10; Y10S; Y10S148/00; Y10S148/085; Y10S148/151; Y10S438/00; Y10S438/928
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
131 words
THE METHOD OF PRODUCING A SEMICONDUCTOR WITH P-N JUNCTION BY DIFFUSING, INTO A FLAT SEMICONDUCTOR CRYSTAL OF ONE CONDUCTANCE TYPE, A GASEOUS DOPING AGENT OF OPPOSITE CONDUCTANCE TYPE, WHICH COMPRISES LAPPING ONE OF THE TWO FLAT SURFACES AND POLISHING THE OTHER OF THE TWO FLAT SURFACES COVERING A PORTION OF THE SURFACE OF THE SEMICONDUCTOR CRYSTAL WITH A PROTECTIVE COATING PREVENTING THE PENETRATION OF DOPING MATERIAL, PROVIDING A RING-SHAPED WINDOE IN PROTECTIVE COATING ON THE POLISHED SIDE OF THE SEMICONDUCTOR CRYSTAL, DIFFUSING THE GASEOUS DOPING AGENT FROM OPPOSITE SIDES INTO THE SEMICONDUCTOR CRYSTAL TO PRODUCE DIFFUSION FRONTS WITHIN THE SEMICONDUCTOR CRYSTAL ALONG A CLOSED LINE WHILE PERMITTING A REGION OF THE ORIGINAL CONDUCTANCE TYPE TO REMAIN UNDER THE PROTECTIVE COATING, AND ATTACHING AN ELECTRODE TO THIS REGION OF ORIGINAL CONDUCTANCE TYPE.
Claim 2
Independent Claim
131 words
THE METHOD OF PRODUCING A SEMICONDUCTOR WITH P-N JUNCTION BY DIFFUSING, INTO A FLAT SEMICONDUCTOR CRYSTAL OF ONE CONDUCTANCE TYPE, A GASEOUS DOPING AGENT OF OPPOSITE CONDUCTANCE TYPE, WHICH COMPRISES LAPPING ONE OF THE TWO FLAT SURFACES AND POLISHING THE OTHER OF THE TWO FLAT SURFACES COVERING A PORTION OF THE SURFACE OF THE SEMICONDUCTOR CRYSTAL WITH A PROTECTIVE COATING PREVENTING THE PENETRATION OF DOPING MATERIAL, PROVIDING A RING-SHAPED WINDOE IN PROTECTIVE COATING ON THE POLISHED SIDE OF THE SEMICONDUCTOR CRYSTAL, DIFFUSING THE GASEOUS DOPING AGENT FROM OPPOSITE SIDES INTO THE SEMICONDUCTOR CRYSTAL TO PRODUCE DIFFUSION FRONTS WITHIN THE SEMICONDUCTOR CRYSTAL ALONG A CLOSED LINE WHILE PERMITTING A REGION OF THE ORIGINAL CONDUCTANCE TYPE TO REMAIN UNDER THE PROTECTIVE COATING, AND ATTACHING AN ELECTRODE TO THIS REGION OF ORIGINAL CONDUCTANCE TYPE.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1969-12-05 | 1970-06-06 | 1970-12-06 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1973-12-05 | 1974-06-06 | 1974-12-06 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1977-12-05 | 1978-06-06 | 1978-12-06 | $7700.00 | Window Closed / Lapsed |