Method of eliminating semiconductor material precipitated upon a heater in epitaxial production of semiconductor members

Claim 1

IN THE PRODUCTION PROCESS OF GROWING MONOCRYSTALLINE SEMICONDUCTOR LAYERS ON SUBSTRATES OF SEMICONDUCTOR MATERIAL BY THERMAL DISSOCATION OF GASEOUS SEMICONDUCTOR COMPOUND AND PRECIPITATION OF THE RESULTING SEMICONDUCTOR SUBSTANCE UPON THE SUBSTRATES PLACED UPON AND HEATED BY A SUPPORTING HEATER STRUBSTRATE CONSISTING AT LEAST AT ITS SURFACE OF A REFRACTORY MATERIAL DIFFERENT FROM THE SEMICONDUCTOR SUBSTANCE BEING PRECIPITATED AND MORE RESISTIVE TO REACTIVE AGENTS AT HIGH TEMPERATURES THAN THE SUBSTANCE BEING PRECIPITATED THE METHOD OF REMOVING FROM THE HEATER STRUCTRUE WHILE IN SITU THE SEMICONDUCTOR COATING GROWTH UPON ITS DURING THE THERMAL PRODUCTION PROCESS, WHICH COMPRISES HEATING THE STRUCTURE, BETWEEN SUCCESSIVE RUNS OF THE SEMICONDUCTOR LAYER PRODUCTION AND AFTER REMOVERAL OF THE SUBATRATE FROM THE STRUCTURE, TO REACTION TEMPERATURE IN A GAS CONTAINING HALOGEN ATOMS TO FORM A GASEOUS COMPOUND OF THE SEMICONDUCTOR COATING, WHEREBY THE COATING IS ELIMINATED FROM THE HEATER STRUCTURE.