Producing an n+n junction using antimony

Claim 1

A METHOD OF FORMING BY VAPOR DEPOSITION AN N+N SINGLE CRYSTAL SILICON SEMICONDUCTOR BODY INCLUDING A SUBSTRATE LAYER OF SINGLE CRYSTAL SILICON SEMICONDUCTOR MATERIAL OF N-CONDUCTIVITY TYPE HAVING A RESISTIVITY UP TO AND INCLUDING 0.05 OHM-CM. AND A VAPOR-DEPOSITED SINGLE CRYSTAL SILICON SEMICONDUCTOR LAYER OF N-CONDUCTIVITY TYPE HAVING A RESISTIVITY OF AT LEAST 1 OHM-CM. THEREON, WITH AN ABRUPT TRANSITION REGION THEREBETWEEN, COMPRISING THE STEPS OF: (A) PROVIDING WITHIN A REACTION CHAMBER A SINGLE CRYSTAL SILICON SEMICONDUCTOR SUBSTRATE WAFER OF NCONDUCTIVITY TYPE DOPED WITH ANTIMONY AS AN IMPURITY ELEMENT TO A RESISTIVITY LEVEL UP TO AND INCLUDING 0.05 OHM-CM., (B) HEATING SAID THUS-DOPED WAFER TO A DEPOSITION TEMPERATURE, (C) INTRODUCING INTO SAID CHAMBER A DECOMPOSABLE VAPOR INCLUDING A HALOGEN-CONTAINING SOURCE COMPOUND OF SILICON SEMICONDUCTOR ATOMS, AND N-CONDUCTIVITY TYPE ACTIVE IMPURITY ATOMS THEREWITH TO IMPART A PREDETERMINED HIGH RESISTIVITY OF AT LEAST 1 OHM-CM. TO SAID SEMICONDUCTOR ATOMS, AND (D) CONTACTING SAID HEATED WAFER WITH SAID VAPOR THEREBY TO FORM A SINGLE CRYSTAL N-CONDUCTIVITY TYPE SILICIN LAYER ON SAID LOW RESISTIVITY LAYER HAVING A RESISTIVITY CORRESPONDING TO SAID IMPURITY ATOMS AT SAID VAPOR, AND AN ABRUPT TRANSITION REGION BETWEEN SAID LOWE RESISTIVITY SUBSTRATE AND SAID HIGH RESISTIVITY VAPOR-DEPOSITED LAYER.

Claim 2

A METHOD OF FORMING BY VAPOR DEPOSITION AN N+N SINGLE CRYSTAL SILICON SEMICONDUCTOR BODY INCLUDING A SUBSTRATE LAYER OF SINGLE CRYSTAL SILICON SEMICONDUCTOR MATERIAL OF N-CONDUCTIVITY TYPE HAVING A RESISTIVITY UP TO AND INCLUDING 0.05 OHM-CM. AND A VAPOR-DEPOSITED SINGLE CRYSTAL SILICON SEMICONDUCTOR LAYER OF N-CONDUCTIVITY TYPE HAVING A RESISTIVITY OF AT LEAST 1 OHM-CM. THEREON, WITH AN ABRUPT TRANSITION REGION THEREBETWEEN, COMPRISING THE STEPS OF: (A) PROVIDING WITHIN A REACTION CHAMBER A SINGLE CRYSTAL SILICON SEMICONDUCTOR SUBSTRATE WAFER OF NCONDUCTIVITY TYPE DOPED WITH ANTIMONY AS AN IMPURITY ELEMENT TO A RESISTIVITY LEVEL UP TO AND INCLUDING 0.05 OHM-CM., (B) HEATING SAID THUS-DOPED WAFER TO A DEPOSITION TEMPERATURE, (C) INTRODUCING INTO SAID CHAMBER A DECOMPOSABLE VAPOR INCLUDING A HALOGEN-CONTAINING SOURCE COMPOUND OF SILICON SEMICONDUCTOR ATOMS, AND N-CONDUCTIVITY TYPE ACTIVE IMPURITY ATOMS THEREWITH TO IMPART A PREDETERMINED HIGH RESISTIVITY OF AT LEAST 1 OHM-CM. TO SAID SEMICONDUCTOR ATOMS, AND (D) CONTACTING SAID HEATED WAFER WITH SAID VAPOR THEREBY TO FORM A SINGLE CRYSTAL N-CONDUCTIVITY TYPE SILICIN LAYER ON SAID LOW RESISTIVITY LAYER HAVING A RESISTIVITY CORRESPONDING TO SAID IMPURITY ATOMS AT SAID VAPOR, AND AN ABRUPT TRANSITION REGION BETWEEN SAID LOWE RESISTIVITY SUBSTRATE AND SAID HIGH RESISTIVITY VAPOR-DEPOSITED LAYER.